|発明の名称||THERMOELECTRIC MATERIAL AND THERMOELECTRIC CONVERSION ELEMENT|
PROBLEM TO BE SOLVED: To enhance the figure of merit under normal temperature while eliminating the risk of deterioration by composing a p-type semiconductor thermoelectric material of a crystal represented by a specified formula where a part of Ce element is substituted by an acceptor element.
SOLUTION: The thermoelectric conversion element comprises an n-type semiconductor thermoelectric material 2 and a p-type semiconductor thermoelectric material 3 of short block shape placed contiguously to each other. The p-type semiconductor thermoelectric material 3 is composed of a crystal represented by a formula CeAM (where, A is a kind of element selected from a group of Ni, Rh and Pt, and M is a kind of element selected from a group of Bi, Sb, As and Sn) where a part of Ce element is substituted by an acceptor element. Since the p-type and n-type semiconductor thermoelectric materials 2, 3 have a high figure of merit, respectively, a large temperature difference can be generated between a heat suction side electrode 4 and heat generating side electrodes 5a, 5b.
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