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* Published Japanese patents only

Hits 28 results

No. Application number
▲▼		 Gazette No
▲▼		 Title
▲▼		 Release Date
▲▼		 Update Date
▲▼		 Information Provider
▲▼
1 P2018-126805 P2020-009802A SPINTRONICS ELEMENT, SPIN TRANSISTOR AND MAGNETIC RESISTANCE MEMORY May 11, 2020 Jun 12, 2020 Kyoto University
2 P2017-132264 P2019-016673A MAGNETIC MEMORY ELEMENT AND MAGNETIC MATERIAL USING THE SAME Apr 13, 2020 May 21, 2020 Kyoto University
3 P2017-124316 P2019-009304A MAGNETIC MEMORY ELEMENT AND METHOD OF WRITING AND READING INFORMATION OF MAGNETIC MEMORY ELEMENT meetings Apr 7, 2020 May 26, 2020 Kanagawa Institute of Industrial Science and Technology
4 P2019-143322 P2020-077841A (In Japanese) スピンテクスチャ制御装置、スピンテクスチャ制御方法、およびメモリ装置 Feb 18, 2020 Jul 3, 2020 Shinshu University
5 P2012-232324 P6116043 SKYRMION DRIVE METHOD AND MICRO ELEMENT meetings Aug 21, 2019 Oct 2, 2019 RIKEN
6 P2006-298840 P4834836 FERROMAGNETIC FINE LINE ELEMENT Nov 21, 2018 Nov 21, 2018 Kyoto University
7 P2017-521945 P6424272 (In Japanese) 磁気抵抗素子および記憶回路 Jun 20, 2018 Nov 20, 2018 Japan Science and Technology Agency
8 P2012-231849 P6143051 SPINTRONICS DEVICE Feb 19, 2015 Jan 16, 2018 TOHOKU UNIVERSITY
9 P2011-197115 P5773491 COBALT THIN FILM AND FORMATION METHOD THEREOF AND NANO-JUNCTION ELEMENT AND MANUFACTURING METHOD THEREFOR AND WIRING AND FORMATION METHOD THEREOF Apr 4, 2013 Jan 17, 2018 Hokkaido University
10 P2011-073051 P5688739 NONVOLATILE OPTICAL MEMORY, OPTICAL STORAGE DEVICE, AND NETWORK ROUTER meetings Nov 1, 2012 Jan 11, 2018 Nara Institute Science and Technology
11 P2012-067089 P5120680 MAGNETIC RESISTANCE ELEMENT AND METHOD FOR MANUFACTURING THE SAME Sep 14, 2012 Dec 21, 2017 Japan Science and Technology Agency
12 P2011-226906 P4963744 MAGNETIC RESISTANCE ELEMENT May 28, 2012 Jan 12, 2018 Japan Science and Technology Agency
13 P2011-226907 P5002788 MAGNETORESISTIVE ELEMENT, AND METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT May 28, 2012 Jan 12, 2018 Japan Science and Technology Agency
14 P2011-226908 P5152734 MAGNETIC MULTILAYER FILM AND METHOD OF MANUFACTURING THE SAME May 28, 2012 Jan 12, 2018 Japan Science and Technology Agency
15 P2009-509018 P5397902 (In Japanese) スピン緩和変動方法、スピン流検出方法、及び、スピン緩和を利用したスピントロニクスデバイス foreign Aug 18, 2011 Jan 25, 2018 TOHOKU UNIVERSITY
16 P2009-295587 P4999016 MULTIFERROIC ELEMENT Jul 13, 2011 Jan 24, 2018 Japan Science and Technology Agency
17 P2009-062278 P5064429 SPIN TRANSISTOR AND NONVOLATILE MEMORY USING THE SAME Jul 12, 2011 Jan 25, 2018 Japan Science and Technology Agency
18 P2009-062281 P5064430 SPIN TRANSISTOR AND NONVOLATILE MEMORY USING SAME Jul 12, 2011 Jan 25, 2018 Japan Science and Technology Agency
19 P2008-513300 P4582488 (In Japanese) 磁性薄膜及びそれを用いた磁気抵抗効果素子並びに磁気デバイス Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
20 P2009-003368 P5288468 MEMORY ELEMENT Jul 11, 2011 Jan 24, 2018 Japan Science and Technology Agency
21 P2007-210197 P4581133 MAGNETORESISTIVE ELEMENT, AND ITS MANUFACTURING METHOD Jul 5, 2011 Feb 9, 2018 Japan Science and Technology Agency
22 P2006-511062 P4082711 (In Japanese) 磁気抵抗素子及びその製造方法 Jul 1, 2011 Feb 23, 2018 Japan Science and Technology Agency
23 P2008-504984 P4803681 (In Japanese) 強磁性ドットのコア回転素子及び強磁性ドットのコア利用情報記憶素子 Jun 27, 2011 Feb 2, 2018 Kyoto University
24 P2003-086145 P4477305 SPIN TRANSISTOR, AND NON-VOLATILE MEMORY USING SAME Jan 11, 2008 Mar 16, 2018 Japan Science and Technology Agency
25 P2006-059953 P4825975 MAGNETIC MEMORY DEVICE AND WRITING METHOD THEREOF Oct 4, 2007 Feb 21, 2018 Kyushu University
26 P2005-380347 P4830107 SPIN RECORDING METHOD AND DEVICE Jul 19, 2007 Mar 5, 2018 Hokkaido University
27 P2005-076104 P4446092 CHARGE-CONTROL FERROMAGNETIC SEMICONDUCTOR Oct 5, 2006 Mar 5, 2018 University of Tsukuba
28 P2001-150456 P3482469 MAGNETIC STORAGE ELEMENT, MAGNETIC MEMORY, MAGNETIC RECORDING METHOD, MANUFACTURING METHOD FOR MAGNETIC STORAGE ELEMENT AND MANUFACTURING METHOD FOR MAGNETIC MEMORY Oct 1, 2003 Mar 20, 2018 Hokkaido University

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