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* Published Japanese patents only


Hits 33 results

No. Application number
Gazette No
Title
Release Date
Update Date
Information Provider
1 P2018-161761 P2020-035917A DIAMOND FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Apr 8, 2020 Jul 21, 2020 Waseda University
2 P2015-506721 P6247684 (In Japanese) 誘電体層及び誘電体層の製造方法、並びに固体電子装置及び固体電子装置の製造方法 Apr 17, 2018 Apr 17, 2018 Japan Science and Technology Agency
3 P2015-534036 P6133991 (In Japanese) ゲルマニウム層上に酸化ゲルマニウムを含む膜を備える半導体構造およびその製造方法 Jun 23, 2017 Dec 18, 2017 Japan Science and Technology Agency
4 P2015-110392 P6501303 MICROPARTICULATED PEROVSKITE FILM AND FUNCTIONAL ELEMENT USING THE SAME meetings Aug 20, 2015 May 23, 2019 Kanazawa UniversityTLO(KUTLO)
5 P2013-047025 P6218062 POWER ELEMENT, POWER CONTROL APPARATUS, AND PROCESS OF MANUFACTURING POWER ELEMENT Jun 29, 2015 Dec 18, 2017 Waseda University
6 P2014-501328 P5581464 (In Japanese) ゲルマニウム層上に酸化ゲルマニウムを含む膜を備える半導体構造およびその製造方法 Jun 23, 2015 Dec 18, 2017 Japan Science and Technology Agency
7 P2013-543456 P5499225 (In Japanese) ゲルマニウム層上に窒化酸化アルミニウム膜を備える半導体構造およびその製造方法 Jun 22, 2015 Dec 18, 2017 Japan Science and Technology Agency
8 P2012-551404 P5293983 (In Japanese) 固体電子装置 meetings Feb 24, 2015 Dec 21, 2017 Japan Science and Technology Agency
9 P2011-545956 P5610492 (In Japanese) SiC半導体素子およびその作製方法 meetings Jul 12, 2013 Jan 11, 2018 Nara Institute Science and Technology
10 P2012-265998 P5575864 PRODUCTION METHOD OF FERROELECTRIC MATERIAL LAYER, THIN FILM TRANSISTOR AND PIEZOELECTRIC INK JET HEAD May 22, 2013 Dec 21, 2017 Japan Science and Technology Agency
11 P2010-221791 P5594773 SELECTIVE FILM FORMATION METHOD, FILM FORMATION APPARATUS AND STRUCTURE UPDATE_EN Apr 23, 2012 Sep 23, 2020 Kyushu University
12 P2010-118857 P5154605 FERROELECTRIC MATERIAL LAYER MANUFACTURING METHOD, THIN FILM TRANSISTOR AND PIEZOELECTRIC INKJET HEAD Dec 12, 2011 Jan 15, 2018 Japan Science and Technology Agency
13 P2010-107764 P5198506 METHOD OF MANUFACTURING FUNCTIONAL DEVICE, THIN-FILM TRANSISTOR, AND PIEZOELECTRIC INKJET HEAD Nov 28, 2011 Jan 15, 2018 Japan Science and Technology Agency
14 P2005-271704 P4654439 METHOD OF FORMING METAL OXIDE THIN FILM Aug 18, 2011 Mar 5, 2018 Toyohashi University of Technology(TCI)
15 P2007-152277 P5228158 LAMINATED STRUCTURE ON SEMICONDUCTOR SUBSTRATE meetings foreign Aug 18, 2011 Feb 19, 2018 Toyohashi University of Technology(TCI)
16 P2010-090578 P5618599 PATTERN FORMATION METHOD Jul 14, 2011 Jan 15, 2018 Japan Science and Technology Agency
17 P2009-239488 P5461951 METHOD OF MANUFACTURING CERAMIC FILM, FERROELECTRIC ELEMENT AND ELECTRONIC COMPONENT Jul 12, 2011 Jan 25, 2018 Japan Science and Technology Agency
18 P2009-003554 P5604044 HIGHER-ORDER SILANE COMPOSITION, METHOD FOR MANUFACTURING SUBSTRATE WITH FILM, ELECTRO-OPTICAL EQUIPMENT AND ELECTRONIC DEVICE Jul 11, 2011 Jan 25, 2018 Japan Science and Technology Agency
19 P2005-034476 P4891550 N-TYPE TRANSISTOR, N-TYPE TRANSISTOR SENSOR AND MANUFACTURING METHOD FOR N-TYPE TRANSISTOR CHANNEL Jun 21, 2011 Feb 26, 2018 Japan Science and Technology Agency
20 P2004-054035 P4587276 FORMING METHOD OF FILM COMPOSED OF LIQUID CRYSTAL POLYMER Jun 20, 2011 Mar 9, 2018 Japan Science and Technology Agency
21 P2008-212634 P5493140 NITRIDING METHOD FOR BASE MATERIAL SURFACE BY HOT WIRING METHOD Mar 19, 2010 Feb 2, 2018 Kyushu Institute of Technology
22 P2009-034054 P5007416 POROUS SILICA FILM AND METHOD FOR MANUFACTURING THE SAME Mar 19, 2010 Jan 25, 2018 Shinshu University
23 P2003-064586 P3950967 METHOD FOR FORMING SOLID COMPOUND FILM CONTAINING Si-O-Si BOND, MODIFICATION METHOD OF SOLID COMPOUND FILM INTO SILICON OXIDE, METHOD FOR FORMING PATTERN, AND LITHOGRAPHIC RESIST Dec 19, 2008 Mar 14, 2018 Japan Defense Agency
24 P2004-014439 P3947791 METHOD OF FORMING FLUORINE-ADDED SILICON OXIDE FILM BY LIGHT IRRADIATION Dec 19, 2008 Mar 7, 2018 Japan Defense Agency
25 P2001-046866 P3820443 METHOD AND SYSTEM FOR DEPOSITING SiO2 FILM USING LASER ABLATION Jan 25, 2008 Mar 20, 2018 Japan Defense Agency
26 P2003-064304 P3826194 METHOD FOR FORMING SILICON OXIDE FILM BY LIGHT IRRADIATION OF COMPOUND CONTAINING Si-O-Si BOND Jan 25, 2008 Mar 14, 2018 Japan Defense Agency
27 P2006-133269 P4843768 METHOD FOR PRODUCING THIN FILM meetings Dec 28, 2007 Feb 20, 2018 University of Miyazaki
28 P2005-254698 P4783895 METHOD FOR NITRIDING FILM, FILM-FORMING SUBSTRATE AND NITRIDING EQUIPMENT Aug 16, 2007 Mar 5, 2018 University of Miyazaki
29 P2003-025369 P4051437 BARIUM TITANATE CRYSTAL, CONDENSER, OPTICAL SWITCH AND FRAM Aug 8, 2007 Mar 14, 2018 Shimane University
30 P2005-094203 P4441689 MANUFACTURING METHOD OF FINE PARTICLE DIFFUSED INSULATING FILM, MEMORY ELEMENT USING THE SAME, MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT, MEMORY ELEMENT, AND LIGHT EMITTING ELEMENT USING THE SAME FILM Dec 1, 2006 Feb 26, 2018 HIROSHIMA UNIVERSITY
31 P2004-167883 P4500961 THIN FILM FORMING METHOD achieved Feb 16, 2006 Mar 13, 2018 Kyushu Institute of Technology
32 P2002-286932 P3629544 SURFACE MODIFYING METHOD OF SOLID COMPOUND HAVING Si-O-Si BOND BY USING LASER BEAM Dec 2, 2005 Mar 20, 2018 Japan Defense Agency
33 P2000-297832 P3521223 METHOD TO CONTROL STRUCTURE OF OXIDE FILM AND APPARATUS USED FOR THE METHOD meetings Aug 28, 2003 Apr 6, 2012 Nagaoka University of Technology

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