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* Published Japanese patents only


Hits 22 results

No. Application number
Gazette No
Title
Release Date
Update Date
Information Provider
1 P2018-161761 P2020-035917A DIAMOND FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME UPDATE_EN Apr 8, 2020 Jul 21, 2020 Waseda University
2 P2015-146869 P6570115 SINGLE ELECTRON TRANSISTOR, MANUFACTURING METHOD THEREOF, AND INTEGRATED CIRCUIT Aug 23, 2019 Sep 30, 2019 RIKEN
3 P2018-037972 P2018-148214A NORMALLY-OFF OPERATING DIAMOND POWER ELEMENT AND INVERTER USING THE SAME Oct 25, 2018 Jan 17, 2020 Waseda University
4 P2017-543415 P6600918 (In Japanese) トンネル電界効果トランジスタ Sep 21, 2018 Nov 21, 2019 Japan Science and Technology Agency
5 P2016-557764 P6316981 (In Japanese) ゲルマニウム層をチャネル領域とする半導体装置およびその製造方法 Aug 16, 2017 May 22, 2018 Japan Science and Technology Agency
6 P2017-052989 P2018-157076A MFS TYPE FIELD EFFECT TRANSISTOR Jul 12, 2017 Jan 16, 2020 Kanazawa UniversityTLO(KUTLO)
7 P2015-534036 P6133991 (In Japanese) ゲルマニウム層上に酸化ゲルマニウムを含む膜を備える半導体構造およびその製造方法 Jun 23, 2017 Dec 18, 2017 Japan Science and Technology Agency
8 P2015-544904 P6169182 (In Japanese) ゲルマニウム層を熱処理する半導体基板の製造方法および半導体装置の製造方法 Jun 23, 2017 Dec 18, 2017 Japan Science and Technology Agency
9 P2015-544804 P6095083 (In Japanese) III-V族化合物半導体ナノワイヤ、電界効果トランジスタおよびスイッチ素子 Apr 7, 2017 Dec 20, 2017 Hokkaido University
10 P2015-168227 P2017-045897A DIAMOND FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR Mar 29, 2017 Jan 17, 2020 Waseda University
11 P2015-531725 P5999611 (In Japanese) トンネル電界効果トランジスタ、その製造方法およびスイッチ素子 Mar 15, 2017 Dec 18, 2017 Japan Science and Technology Agency
12 P2016-025819 P6712735 POWER ELEMENT UPDATE_EN Nov 10, 2016 Jul 21, 2020 Waseda University
13 P2013-047025 P6218062 POWER ELEMENT, POWER CONTROL APPARATUS, AND PROCESS OF MANUFACTURING POWER ELEMENT Jun 29, 2015 Dec 18, 2017 Waseda University
14 P2014-501328 P5581464 (In Japanese) ゲルマニウム層上に酸化ゲルマニウムを含む膜を備える半導体構造およびその製造方法 Jun 23, 2015 Dec 18, 2017 Japan Science and Technology Agency
15 P2013-543456 P5499225 (In Japanese) ゲルマニウム層上に窒化酸化アルミニウム膜を備える半導体構造およびその製造方法 Jun 22, 2015 Dec 18, 2017 Japan Science and Technology Agency
16 P2011-545956 P5610492 (In Japanese) SiC半導体素子およびその作製方法 meetings Jul 12, 2013 Jan 11, 2018 Nara Institute Science and Technology
17 P2011-232085 P5835771 LOGIC CIRCUIT May 22, 2013 Jan 17, 2018 Hokkaido University
18 P2006-163856 P5167479 GRAPHENE INTERGRATED CIRCUIT Feb 19, 2010 Feb 22, 2018 Hokkaido University
19 P2005-254698 P4783895 METHOD FOR NITRIDING FILM, FILM-FORMING SUBSTRATE AND NITRIDING EQUIPMENT Aug 16, 2007 Mar 5, 2018 University of Miyazaki
20 P2004-207620 P4517144 MOS FIELD EFFECT TRANSISTOR TYPE QUANTUM DOT LIGHT-EMITTING ELEMENT AND LIGHT-RECEIVING ELEMENT, PHOTOELECTRON INTEGRATED CHIP USING THE SAME, AND DATA PROCESSOR Mar 3, 2006 Mar 7, 2018 HIROSHIMA UNIVERSITY
21 P2003-082986 P3657591 P-CHANNEL ELECTRIC FIELD EFFECT TRANSISTOR AND SENSOR USING THE SAME Dec 7, 2004 Mar 15, 2018 Japan Science and Technology Agency
22 P2002-274343 P3910512 P-CHANNEL FIELD EFFECT TRANSISTOR Jun 4, 2004 Mar 16, 2018 Japan Science and Technology Agency

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