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* Published Japanese patents only


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No. Application number
Gazette No
Title
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1 P2017-121137 P2019-009169A SEMICONDUCTOR OPTICAL DEVICE, SEMICONDUCTOR LIGHT SOURCE, OPTICAL INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF SEMICONDUCTOR OPTICAL DEVICE meetings foreign Jun 13, 2019 Jun 21, 2019 National Institute of Information and Communications Technology
2 P2016-035999 P2017-152637A HEAT RADIATION LIGHT SOURCE Nov 22, 2018 Nov 22, 2018 Kyoto University
3 P2017-548816 P6590420 (In Japanese) 窒素化合物の製造方法及び製造装置 UPDATE_EN commons foreign Sep 18, 2018 Nov 20, 2019 Advanced Industrial Science and Technology
4 P2017-500529 WO2016132746 (In Japanese) 薄膜基板と半導体装置とこれらの製造方法および成膜装置および成膜方法およびGaNテンプレート commons Dec 21, 2017 Dec 21, 2017 Nagoya University
5 P2015-221683 P2017-088454A SUBSTRATE, LUMINOUS ELEMENT, AND METHOD OF PRODUCING SUBSTRATE meetings Jun 23, 2017 Aug 22, 2017 Kyoto Institute of Technology
6 P2009-070630 P5196403 METHOD FOR MANUFACTURING SAPPHIRE SUBSTRATE, AND SEMICONDUCTOR DEVICE achieved Sep 8, 2016 Jan 23, 2018 Yamaguchi TLO
7 P2009-117791 P5557180 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT achieved Sep 8, 2016 Jan 23, 2018 Yamaguchi TLO
8 P2010-526523 P5392855 (In Japanese) 半導体基板及びその製造方法 achieved foreign Sep 8, 2016 Jan 17, 2018 Yamaguchi TLO
9 P2010-540380 P5464446 (In Japanese) 半導体発光素子及びその製造方法 achieved foreign Sep 8, 2016 Jan 17, 2018 Yamaguchi TLO
10 P2010-037025 P5435646 SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME achieved Sep 8, 2016 Jan 17, 2018 Yamaguchi TLO
11 P2010-080473 P5376462 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME achieved Sep 8, 2016 Jan 17, 2018 Yamaguchi TLO
12 P2006-002972 P4915009 SEMICONDUCTOR MEMBER, AND METHOD OF MANUFACTURING SAME achieved Jun 29, 2016 Feb 22, 2018 Yamaguchi TLO
13 P2014-502031 P6019541 (In Japanese) 半導体発光素子 Oct 28, 2015 Dec 18, 2017 YAMAGUCHI UNIVERSITY
14 P2013-138894 P6232611 LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME Mar 5, 2015 Dec 20, 2017 Hokkaido University
15 P2009-240213 P5300078 PHOTONIC CRYSTAL LIGHT-EMITTING DIODE Aug 11, 2014 Mar 22, 2019 Kyoto University
16 P2013-156638 P6265328 SEMICONDUCTOR LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT USING THE SAME commons Aug 13, 2013 Jan 31, 2018 Nagoya Institute of Technology
17 P2011-268141 P6450061 RED LIGHT-EMITTING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Jun 27, 2013 Jan 18, 2019 Osaka University
18 P2011-053393 P5822190 MULTI-WAVELENGTH LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD FOR THE SAME achieved foreign Nov 4, 2011 Jan 4, 2018 Yamaguchi TLO
19 P2011-060133 P5854419 MULTIPLE-WAVELENGTH LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME achieved foreign Nov 4, 2011 Jan 4, 2018 Yamaguchi TLO
20 P2006-254012 P4997502 METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT commons Aug 18, 2011 Feb 22, 2018 TOHOKU UNIVERSITY
21 P2006-254013 P4852755 METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR ELEMENT commons Aug 18, 2011 Feb 22, 2018 TOHOKU UNIVERSITY
22 P2011-013852 P5702165 HIGH-EFFICIENCY GALLIUM NITRIDE BASED LIGHT-EMITTING DIODE PROVIDED BY SURFACE ROUGHENING achieved Jul 14, 2011 Jan 12, 2018 Japan Science and Technology Agency
23 P2008-500965 P5706601 (In Japanese) 平坦な半極性窒化ガリウムの成長技術 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
24 P2008-514810 P5743127 (In Japanese) 半極性(Ga,Al,In,B)N薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
25 P2008-520225 P5010597 (In Japanese) 耐圧釜を用いた超臨界アンモニア中でのIII族窒化物結晶の成長方法 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
26 P2007-513224 P5379973 (In Japanese) 有機金属気相成長法による非極性窒化インジウムガリウム薄膜、ヘテロ構造物およびデバイスの製作 Jul 6, 2011 Feb 9, 2018 Japan Science and Technology Agency
27 P2007-228178 P5242975 DIFFRACTION GRATING TYPE LIGHT-EMITTING DIODE Jul 5, 2011 Mar 22, 2019 Japan Science and Technology Agency
28 P2005-512858 P5719493 (In Japanese) 表面粗化による高効率の(B,Al,Ga,In)Nベースの発光ダイオード achieved Jun 23, 2011 Feb 26, 2018 Japan Science and Technology Agency
29 P2002-156564 P3951171 MATERIAL FOR FORMING ELECTRON TRANSFERABLE BODY, METHOD FOR FORMING ELECTRON TRANSFERABLE BODY AND ELECTRON TRANSFERABLE BODY achieved Jun 10, 2011 Mar 19, 2018 Japan Science and Technology Agency
30 P2000-205941 P3531865 SUPER FLAT TRANSPARENT CONDUCTIVE FILM AND MANUFACTURING METHOD OF THE SAME Jun 8, 2011 Sep 9, 2015 Japan Science and Technology Agency
31 P2009-201593 P5409210 SEMICONDUCTOR LIGHT EMITTING ELEMENT May 23, 2011 Jan 22, 2018 Kanazawa Institute of Technology
32 P2008-298420 P5540292 ILLUMINATION DEVICE commons meetings Apr 4, 2011 Jan 30, 2018 Techno Network Shikoku co.,ltd.
33 P2007-298752 P5394632 METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE SAME Mar 14, 2011 Feb 8, 2018 Osaka Prefecture University
34 P2008-222095 P5344676 SUBSTRATE FOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT May 21, 2010 Jan 30, 2018 Kanazawa Institute of Technology
35 P2007-219890 P4538476 OPTICAL SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF achieved Mar 13, 2009 Feb 7, 2018 Saitama University
36 P2007-086470 P5277430 ZINC OXIDE BASED LIGHT-EMITTING DEVICE Nov 7, 2008 Feb 8, 2018 Shimane University
37 P2005-178650 P4491610 SEMICONDUCTOR FUNCTION ELEMENT commons Oct 31, 2008 Feb 27, 2018 Chiba University
38 P2006-131763 P4392505 POROUS SILICON FILM, ITS MANUFACTURING METHOD AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT meetings Dec 28, 2007 Feb 21, 2018 Gunma University
39 P2002-198875 P3605643 GROWING METHOD OF ZINC-OXIDE-BASED THIN FILM Aug 8, 2007 Mar 19, 2018 Shimane University
40 P2005-247902 P5034035 SEMICONDUCTOR LIGHT EMITTING ELEMENT, PACKAGE THEREOF, AND MANUFACTURING METHOD THEREOF commons meetings Apr 2, 2007 Feb 27, 2018 Shizuoka University
41 P2004-244210 P4500963 QUANTUM SEMICONDUCTOR DEVICE AND ITS FABRICATION PROCESS Feb 16, 2007 Mar 13, 2018 The University of Electro-Communications
42 P2005-094203 P4441689 MANUFACTURING METHOD OF FINE PARTICLE DIFFUSED INSULATING FILM, MEMORY ELEMENT USING THE SAME, MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT, MEMORY ELEMENT, AND LIGHT EMITTING ELEMENT USING THE SAME FILM Dec 1, 2006 Feb 26, 2018 HIROSHIMA UNIVERSITY
43 P2004-331166 P4257431 METHOD OF FORMING POROUS SEMICONDUCTOR FILM, LIGHT EMITTING DEVICE, AND OPTICAL SENSOR meetings Nov 2, 2006 Mar 13, 2018 Gunma University
44 P2004-309992 P4631047 STRUCTURE PROVIDED WITH ANODICALLY OXIDIZED ALUMINA FILM, ITS PRODUCTION METHOD AND ITS UTILIZATION May 12, 2006 Mar 7, 2018 HIROSHIMA UNIVERSITY
45 P2004-207620 P4517144 MOS FIELD EFFECT TRANSISTOR TYPE QUANTUM DOT LIGHT-EMITTING ELEMENT AND LIGHT-RECEIVING ELEMENT, PHOTOELECTRON INTEGRATED CHIP USING THE SAME, AND DATA PROCESSOR Mar 3, 2006 Mar 7, 2018 HIROSHIMA UNIVERSITY
46 P2004-141177 P4810650 CARBON NANOTUBE FET commons Feb 16, 2006 Mar 13, 2018 Nagoya University
47 P2003-298003 P4341013 FAR-INFRARED LIGHT EMITTING DEVICE AND FAR-INFRARED LASER commons Apr 8, 2005 Mar 16, 2018 Japan Science and Technology Agency
48 P2000-131570 P3451314 METHOD OF GROWING HIGH QUALITY CRYSTAL commons Jan 18, 2005 Nov 7, 2017 Shizuoka University
49 P2000-225122 P3538634 SUBSTRATE FOR SEMICONDUCTOR ELEMENT AND METHOD OF PRODUCING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT commons Jan 18, 2005 Nov 7, 2017 Shizuoka University
50 P2001-054382 P3969959 TRANSPARENT OXIDE P-N JUNCTION DIODE Oct 1, 2003 Mar 16, 2018 Japan Science and Technology Agency

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