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* Published Japanese patents only


Hits 110 results

No. Application number
Gazette No
Title
Release Date
Update Date
Information Provider
1 P2017-039028 P2018-147946A SEMICONDUCTOR FILM FORMING METHOD UPDATE_EN commons meetings Oct 21, 2019 Nov 20, 2019 Kyushu Institute of Technology
2 P2018-020443 P2019-137570A (In Japanese) ホウ素原子層シートおよび積層シートとその製造方法 UPDATE_EN meetings foreign Oct 18, 2019 Nov 21, 2019 Tokyo Institute of Technology
3 P2018-215652 P2019-094254A METHOD FOR MANUFACTURING DIAMOND SEMICONDUCTOR SUBSTRATE Jul 24, 2019 Oct 23, 2019 Waseda University
4 P2018-155987 - (In Japanese) ダイヤモンド単結晶およびその製造方法 (Patent unpublished to the public) meetings Apr 16, 2019 Apr 16, 2019 National Institutes for Quantum and Radiological Science and Technology
5 P2018-038847 P2019-151530A (In Japanese) SiC単結晶の製造方法 commons Jul 13, 2018 Sep 30, 2019 Shinshu University
6 P2017-075604 P6356301 IRIDIUM OXIDE NANOSHEET, DISPERSION SOLUTION CONTAINING THE IRIDIUM OXIDE NANOSHEET AND MANUFACTURING METHOD OF THE DISPERSION SOLUTION commons Dec 25, 2017 Jul 19, 2018 Shinshu University
7 P2015-220064 P2017-088444A MANUFACTURING METHOD OF SEMICONDUCTOR WAFER foreign Oct 18, 2017 Oct 18, 2017 Kwansei Gakuin University
8 P2017-084553 P2018-177621A OXIDE SEMICONDUCTOR SINGLE CRYSTAL, METHOD FOR MANUFACTURING THE SAME, TRANSPARENT CONDUCTIVE MATERIAL AND TRANSPARENT CONDUCTIVE SUBSTRATE commons meetings Sep 13, 2017 Feb 21, 2019 Tokyo University of Science
9 P2015-149146 P2017-030984A PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE Jul 19, 2017 Jul 19, 2017 Yamaguchi TLO
10 P2017-067147 P2018-168020A PRODUCTION METHOD OF SiC SINGLE CRYSTAL commons Jul 13, 2017 Feb 22, 2019 Shinshu University
11 P2015-221683 P2017-088454A SUBSTRATE, LUMINOUS ELEMENT, AND METHOD OF PRODUCING SUBSTRATE meetings Jun 23, 2017 Aug 22, 2017 Kyoto Institute of Technology
12 P2015-544904 P6169182 (In Japanese) ゲルマニウム層を熱処理する半導体基板の製造方法および半導体装置の製造方法 Jun 23, 2017 Dec 18, 2017 Japan Science and Technology Agency
13 P2015-557780 P6604511 (In Japanese) ダイヤモンド素子、磁気センサー、磁気計測装置 UPDATE_EN Jun 23, 2017 Nov 21, 2019 Japan Science and Technology Agency
14 P2014-097751 P6253150 SEMICONDUCTOR SUBSTRATE, EPITAXIAL WAFER AND METHOD FOR MANUFACTURING EPITAXIAL WAFER Jun 14, 2017 Jan 22, 2018 Tokyo University of Agriculture and Technology
15 P2016-213949 P2018-070422A PRODUCTION METHOD OF GALLIUM OXIDE, AND CRYSTAL GROWTH APPARATUS meetings May 12, 2017 Aug 27, 2018 Wakayama University
16 P2015-536448 P6510413 (In Japanese) 窒化物半導体結晶、製造方法および製造装置 Apr 7, 2017 May 23, 2019 Tokyo University of Agriculture and Technology
17 P2012-166325 P5884101 NITRIDE ELECTRIDE AND METHOD FOR PRODUCING THE SAME Mar 16, 2017 Dec 21, 2017 Japan Science and Technology Agency
18 P2015-508425 P6384921 (In Japanese) シリコン単結晶生成装置、シリコン単結晶生成方法 Mar 16, 2017 Sep 20, 2018 Kyushu University
19 P2015-164999 P6590145 SILICON INGOT, METHOD FOR MANUFACTURING THE SAME AND SEED CRYSTAL UPDATE_EN commons Jan 19, 2017 Nov 21, 2019 Nagoya University
20 P2015-026211 P6399600 SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND VAPOR PHASE GROWTH APPARATUS USED THEREFOR Dec 28, 2016 Oct 31, 2018 Yamaguchi TLO
21 P2014-534207 P5969616 (In Japanese) ゲスト化合物内包高分子金属錯体結晶、その製造方法、結晶構造解析用試料の作製方法、及び有機化合物の分子構造決定方法 Nov 2, 2016 Dec 18, 2017 Japan Science and Technology Agency
22 P2016-013330 P2016-147800A FLOATING ZONE METING METHOD, AND DEVICE USING THE SAME Oct 25, 2016 Nov 30, 2016 University of Yamanashi
23 P2009-070630 P5196403 METHOD FOR MANUFACTURING SAPPHIRE SUBSTRATE, AND SEMICONDUCTOR DEVICE achieved Sep 8, 2016 Jan 23, 2018 Yamaguchi TLO
24 P2010-526523 P5392855 (In Japanese) 半導体基板及びその製造方法 achieved foreign Sep 8, 2016 Jan 17, 2018 Yamaguchi TLO
25 P2006-116979 P5023321 MgTiO3 SINGLE CRYSTAL BODY, PRISM USING IT, AND METHOD FOR MANUFACTURING MgTiO3 SINGLE CRYSTAL Jul 8, 2016 Feb 22, 2018 Yamaguchi TLO
26 P2007-078580 P5205613 SELECTIVE GROWTH METHOD OF GaN LAYER achieved Jul 8, 2016 Feb 9, 2018 Yamaguchi TLO
27 P2015-193699 P6598111 METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL UPDATE_EN commons Mar 17, 2016 Nov 21, 2019 Shinshu University
28 P2013-553314 P5904421 (In Japanese) III族窒化物結晶および半導体装置の製造方法 Nov 19, 2015 Dec 20, 2017 Osaka University
29 P2011-159584 P5887742 DIAMOND SUBSTRATE Sep 1, 2015 Jan 12, 2018 Kanazawa UniversityTLO(KUTLO)
30 P2012-032198 P5948578 SURFACE PROCESSING METHOD OF DIAMOND Sep 1, 2015 Dec 25, 2017 Kanazawa UniversityTLO(KUTLO)
31 P2010-272963 P5681959 GRAPHENE-DIAMOND LAMINATE meetings Sep 1, 2015 Jan 16, 2018 Kanazawa UniversityTLO(KUTLO)
32 P2015-102143 P6561402 PRODUCTION METHOD OF DIAMOND Aug 20, 2015 Sep 30, 2019 Kanazawa UniversityTLO(KUTLO)
33 P2014-266464 P2016-127130A PROCESSING METHOD AND PROCESSING DEVICE meetings Aug 3, 2015 Oct 26, 2016 Kumamoto University
34 P2015-035214 P6534030 MANUFACTURING METHOD OF AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL commons Jul 3, 2015 Jul 22, 2019 Nagoya University
35 P2013-179848 P6233919 AIR BUBBLE JET MEMBER AND PROTEIN ADSORPTION AIR BUBBLE JET MEMBER FOR PROTEIN CRYSTAL DEVICE, PROTEIN CRYSTAL DEVICE AND PROTEIN CRYSTALLIZATION METHOD, AND PROTEIN CRYSTAL CUTTING DEVICE AND PROTEIN CRYSTAL CUTTING METHOD Jun 24, 2015 Dec 18, 2017 Japan Science and Technology Agency
36 P2013-158888 P6355096 LIQUID REPELLENT COMPOSITE MEMBER Apr 20, 2015 Jul 18, 2018 YAMAGUCHI UNIVERSITY
37 P2013-125018 P6057292 METHOD OF MANUFACTURING SIC SEMICONDUCTOR ELEMENT foreign Apr 2, 2015 Dec 18, 2017 Kwansei Gakuin University
38 P2013-176635 P6181474 SUBSTRATE FOR GROWING NITRIDE SEMICONDUCTOR commons Mar 24, 2015 Dec 15, 2017 University of Shiga Prefecture
39 P2013-175436 P5810424 ARTIFICIAL SUPERLATTICE PARTICLE, AND METHOD OF MANUFACTURING THE SAME Oct 30, 2014 Dec 20, 2017 University of Yamanashi
40 P2014-039647 P6376776 METHOD FOR PRODUCING TANTALUM NITRIDE commons Aug 7, 2014 Aug 28, 2018 Shinshu University
41 P2013-097609 P5688780 SiC SUBSTRATE, CARBON SUPPLY FEED SUBSTRATE, AND SiC SUBSTRATE WITH CARBON NANOMATERIAL May 8, 2014 Dec 18, 2017 Kwansei Gakuin University
42 P2011-111721 P5545268 SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE Aug 5, 2013 Jan 5, 2018 Kwansei Gakuin University
43 P2012-185253 P5376477 SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE Aug 5, 2013 Dec 25, 2017 Kwansei Gakuin University
44 P2007-168708 P5251015 HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD achieved Aug 5, 2013 Feb 8, 2018 Kwansei Gakuin University
45 P2009-115912 P5464544 SINGLE CRYSTAL SiC SUBSTRATE, SINGLE CRYSTAL SiC SUBSTRATE WITH EPITAXIAL GROWTH LAYER, SiC SUBSTRATE, CARBON SUPPLY FEED SUBSTRATE, AND SiC SUBSTRATE WITH CARBON NANOMATERIAL Aug 5, 2013 Jan 22, 2018 Kwansei Gakuin University
46 P2009-274910 P5540349 METHOD OF MANUFACTURING SEMICONDUCTOR WAFER Aug 5, 2013 Jan 22, 2018 Kwansei Gakuin University
47 P2010-164010 P5561676 HEAT TREATMENT APPARATUS FOR SiC SEMICONDUCTOR WAFER achieved Aug 5, 2013 Jan 12, 2018 Kwansei Gakuin University
48 P2012-277551 P6037278 CRYSTAL FILM FORMED BODY AND PRODUCTION METHOD THEREOF commons Jun 7, 2013 Dec 21, 2017 Shinshu University
49 P2012-286842 P6028169 SOLID ELECTROLYTE FOR LITHIUM ION SECONDARY BATTERY AND PROCESS OF MANUFACTURING THE SAME commons Jun 7, 2013 Dec 21, 2017 Shinshu University
50 P2013-033503 P6137668 PROCESS OF MANUFACTURING ZINC OXIDE CRYSTAL LAYER, ZINC OXIDE CRYSTAL LAYER, AND MIST CHEMICAL VAPOR DEPOSITION DEVICE commons meetings Apr 1, 2013 Dec 20, 2017 Kumamoto University
51 P2011-109811 P5779803 SUBSTRATE PARTICLE OR AGGLOMERATE AND METHODS FOR MANUFACTURING THE SAME Dec 19, 2012 Dec 27, 2017 University of Yamanashi
52 P2006-179593 P4982845 METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL THIN FILM OF MATERIAL meetings Nov 19, 2012 Feb 22, 2018 Kyoto Institute of Technology
53 P2012-139897 P5246900 METHOD OF PRODUCING MAGNESIUM OXIDE THIN FILM Aug 31, 2012 Dec 21, 2017 Japan Science and Technology Agency
54 P2010-098200 P5327977 COMPOSITION FOR FORMING CONDUCTIVE FILM AND METHOD FOR FORMING CONDUCTIVE FILM Nov 15, 2011 Jan 15, 2018 Japan Science and Technology Agency
55 P2009-059753 P5463582 ARTIFICIAL SUPERLATTICE DIELECTRIC NANOPARTICLE AND METHOD OF MANUFACTURING THE SAME Sep 13, 2011 Jan 23, 2018 University of Yamanashi
56 P2010-526004 P5751513 (In Japanese) 窒化ガリウムのバルク結晶とその成長方法 achieved Jul 14, 2011 Jan 15, 2018 Japan Science and Technology Agency
57 P2009-534647 P5883552 (In Japanese) III族窒化物結晶を安熱法成長させる方法 achieved Jul 13, 2011 Jan 25, 2018 Japan Science and Technology Agency
58 P2008-520225 P5010597 (In Japanese) 耐圧釜を用いた超臨界アンモニア中でのIII族窒化物結晶の成長方法 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
59 P2008-551465 P5896442 (In Japanese) III族窒化物膜の成長方法 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
60 P2007-034143 P4885001 COMPOUND SUPERCONDUCTOR, AND METHOD FOR PRODUCING THE SAME commons Jul 4, 2011 Feb 9, 2018 Japan Science and Technology Agency
61 P2006-510484 P4708334 (In Japanese) 透明強磁性単結晶化合物の製造方法 commons Jul 1, 2011 Feb 23, 2018 Japan Science and Technology Agency
62 P2005-502997 P4619946 (In Japanese) ボレート系結晶の製造方法とレーザー発振装置 achieved Jun 23, 2011 Feb 26, 2018 Japan Science and Technology Agency
63 P2005-503747 P4382748 (In Japanese) 半導体結晶成長方法 commons meetings Jun 23, 2011 Feb 26, 2018 Japan Science and Technology Agency
64 P2004-076129 P4398762 METHOD FOR MANUFACTURING SINGLE CRYSTAL OF GROUP III ELEMENT NITRIDE, AND REACTION VESSEL USED THEREFOR commons Jun 20, 2011 Mar 9, 2018 Japan Science and Technology Agency
65 P2000-150679 P3893012 METHOD AND DEVICE FOR GROWING HIGH QUALITY SINGLE CRYSTAL achieved Jun 8, 2011 Apr 22, 2013 Japan Science and Technology Agency
66 P2010-138027 P5545567 SUBSTRATE FOR GROWING SINGLE CRYSTAL DIAMOND, AND METHOD FOR PRODUCING THE SINGLE CRYSTAL DIAMOND Apr 12, 2011 Jan 16, 2018 Kanazawa UniversityTLO(KUTLO)
67 P2008-223713 P5655228 METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURE Mar 31, 2011 Feb 2, 2018 Hokkaido University
68 P2007-298752 P5394632 METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE SAME Mar 14, 2011 Feb 8, 2018 Osaka Prefecture University
69 P2008-533177 P5229735 (In Japanese) AlN結晶の製造方法 Feb 7, 2011 Jan 30, 2018 Meisei University
70 P2009-063809 P5273468 METHOD FOR PRODUCING BARIUM TITANATE CRYSTAL Nov 4, 2010 Jan 29, 2018 Shimane University
71 P2009-048503 P5305348 MAGNETOELECTRIC EFFECT MATERIAL AND ELECTRONIC ELEMENT COMPRISING MAGNETOELECTRIC EFFECT MATERIAL commons meetings Sep 28, 2010 Jan 29, 2018 Okayama University
72 P2010-157342 P5493107 METHOD FOR PRODUCING MgO THIN FILM OF PLANE ORIENTATION (111) commons Aug 13, 2010 Jan 15, 2018 Japan Science and Technology Agency
73 P2010-152397 P5491300 METHOD FOR PRODUCING ALUMINUM NITRIDE commons Jul 16, 2010 Jan 15, 2018 Japan Science and Technology Agency
74 P2009-065969 P5236542 METHOD FOR PRODUCING OXIDE SUPERCONDUCTIVE THIN FILM meetings Jul 9, 2010 Jan 22, 2018 Kumamoto National College of Technology Yatsushiro Campus
75 P2008-201312 P5256555 THERMOELECTRIC CONVERSION MATERIAL meetings Jun 18, 2010 Jan 30, 2018 Shimane University
76 P2010-075467 P5660528 BULK TYPE MANGANESE SILICIDE SINGLE CRYSTAL OR POLYCRYSTAL DOPED WITH Ga OR Sn, AND METHOD OF MANUFACTURING THE SAME meetings Jun 11, 2010 Jan 18, 2018 Ibaraki University
77 P2008-270238 P5483228 CONDUCTIVE DIAMOND HOLLOW FIBER FILM AND MANUFACTURING METHOD FOR THE SAME meetings May 14, 2010 Jan 30, 2018 Tokyo University of Science
78 P2009-213242 P5213186 LAMINATED BODY AND METHOD FOR MANUFACTURING THE SAME meetings Mar 19, 2010 Jan 25, 2018 Shinshu University
79 P2007-542744 P4882075 (In Japanese) ルチル(TiO2)単結晶の製造方法及びルチル(TiO2)単結晶、並びにこれを用いた光アイソレータ meetings Jan 12, 2010 Feb 8, 2018 University of Yamanashi
80 P2003-502272 P4848495 (In Japanese) 単結晶炭化ケイ素及びその製造方法 achieved foreign May 22, 2009 Mar 14, 2018 Kwansei Gakuin University
81 P2007-077256 P5213095 METHOD FOR FLATTENING SURFACE OF SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE, AND SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE achieved Nov 21, 2008 Feb 8, 2018 Kwansei Gakuin University
82 P2007-077439 P5213096 LIQUID PHASE EPITAXIAL GROWTH METHOD OF SINGLE CRYSTAL SILICON CARBIDE, METHOD FOR PRODUCING SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE, AND SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE achieved Nov 21, 2008 Feb 8, 2018 Kwansei Gakuin University
83 P2006-223664 P4765074 NANOPARTICLE AND METHOD FOR PRODUCING THE SAME Oct 31, 2008 Feb 22, 2018 Kobe University
84 P2007-012113 P4257437 METHOD OF MANUFACTURING THIN-FILM ELECTRODE Aug 15, 2008 Feb 16, 2018 Nagaoka University of Technology
85 P2003-198490 P4054873 METHOD FOR GROWING Si-BASED CRYSTAL, Si-BASED CRYSTAL, Si-BASED CRYSTAL SUBSTRATE AND SOLAR BATTERY meetings Jun 6, 2008 Mar 14, 2018 TOHOKU UNIVERSITY
86 P2006-187415 P5152887 METHOD OF REFORMING SURFACE OF SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE, METHOD OF FORMING SINGLE CRYSTAL SILICON CARBIDE THIN FILM, ION IMPLANTATION AND ANNEALING METHOD, AND SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND SINGLE CRYSTAL SILICON CARBIDE SEMICONDUCTOR SUBSTRATE achieved Mar 28, 2008 Feb 15, 2018 Kwansei Gakuin University
87 P2006-212627 P5207427 LIQUID PHASE GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL, SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL, LIQUID PHASE EPITAXIAL GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL PLATE, SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL PLATE, GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL SUBSTRATE AND SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL SUBSTRATE achieved Mar 28, 2008 Feb 15, 2018 Kwansei Gakuin University
88 P2007-122088 P5526422 KF-CONTAINING BARIUM TITANATE-BASED PIEZOELECTRIC SUBSTANCE, AND ITS PRODUCTION METHOD meetings Mar 28, 2008 Feb 8, 2018 Shimane University
89 P2004-265859 P4719835 METHOD FOR PRODUCING SILICA POROUS CRYSTAL meetings Dec 7, 2007 Mar 13, 2018 Shimane Institute for Industrial Technology
90 P2001-018643 P3586712 METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MATERIAL AND ITS EQUIPMENT meetings Aug 8, 2007 Mar 19, 2018 Shimane University
91 P2003-025369 P4051437 BARIUM TITANATE CRYSTAL, CONDENSER, OPTICAL SWITCH AND FRAM Aug 8, 2007 Mar 14, 2018 Shimane University
92 P2005-125865 P4840841 METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE achieved Jul 19, 2007 Feb 26, 2018 Kwansei Gakuin University
93 P2003-027893 P3877162 GSO SINGLE CRYSTAL AND SCINTILLATOR FOR PET Jun 1, 2007 Mar 15, 2018 National institute of Radiological Sciences
94 P2005-036870 P5002803 PRODUCTION METHOD OF DIAMOND-LIKE CARBON FILM meetings Feb 16, 2007 Mar 5, 2018 The University of Electro-Communications
95 P2002-122237 P3714471 COATING MEMBER FOR MEDICAL USE commons Jan 18, 2005 May 23, 2019 Keio University
96 P2000-131570 P3451314 METHOD OF GROWING HIGH QUALITY CRYSTAL commons Jan 18, 2005 Nov 7, 2017 Shizuoka University
97 P2000-225122 P3538634 SUBSTRATE FOR SEMICONDUCTOR ELEMENT AND METHOD OF PRODUCING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT commons Jan 18, 2005 Nov 7, 2017 Shizuoka University
98 P2000-371387 P3520333 METHOD OF GROWING BULK SINGLE CRYSTAL BETA IRON SILICIDE CRYSTAL FROM LIQUID PHASE commons Jan 18, 2005 Apr 6, 2012 Shizuoka University
99 P1999-248700 P3079265 GROWTH OF HIGH MELTING POINT SILICIDE CRYSTAL BY USING MOLTEN LIQUID OF INTERMETALLIC COMPOUND commons Jan 18, 2005 Mar 22, 2018 Shizuoka University
100 P2000-049667 P3446032 MANUFACTURING METHOD OF NON-DISLOCATIONAL, SINGLE CRYSTAL SILICON commons Aug 27, 2004 Apr 5, 2012 Shinshu University

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