Top > Search of Japanese Patents

Search of Japanese Patents

Display results per page Option
Patent state
Information provider
Applicant
IPC
F-term
Specify icons
Select data
カレンダー表示 カレンダー表示
Specify number
Display option Order by

Clear


* Published Japanese patents only


Hits 12 results

No. Application number
Gazette No
Title
Release Date
Update Date
Information Provider
1 P2004-331166 P4257431 METHOD OF FORMING POROUS SEMICONDUCTOR FILM, LIGHT EMITTING DEVICE, AND OPTICAL SENSOR meetings Nov 2, 2006 Mar 13, 2018 Gunma University
2 P2006-131763 P4392505 POROUS SILICON FILM, ITS MANUFACTURING METHOD AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT meetings Dec 28, 2007 Feb 21, 2018 Gunma University
3 P2005-512858 P5719493 (In Japanese) 表面粗化による高効率の(B,Al,Ga,In)Nベースの発光ダイオード achieved Jun 23, 2011 Feb 26, 2018 Japan Science and Technology Agency
4 P2013-558830 P5598829 (In Japanese) オゾン水を用いたパターニング方法 Feb 9, 2015 Dec 18, 2017 Japan Science and Technology Agency
5 P2017-045820 P2018-149611A SILICON NANOWALL STRUCTURE AND METHOD OF PRODUCING THE SAME Mar 14, 2017 Jan 21, 2020 Japan Science and Technology Agency
6 P2012-286076 P6086363 IN-LIQUID PLASMA TREATMENT APPARATUS AND IN-LIQUID PLASMA TREATMENT METHOD meetings Oct 2, 2013 Dec 25, 2017 Kanazawa UniversityTLO(KUTLO)
7 P2006-247659 P4982742 CATALYTIC CHEMICAL PROCESSING METHOD AND APPARATUS USING MAGNETIC FINE PARTICLES meetings Apr 4, 2008 Feb 22, 2018 Kumamoto University
8 P2003-059871 P4235709 METHOD OF MANUFACTURING FINE FACET SHAPE ON SURFACE OF SEMICONDUCTOR SUBSTRATE Jun 13, 2008 Mar 14, 2018 Kwansei Gakuin University
9 P2005-124734 P4608613 LASER IRRADIATION MICROWORKING METHOD AND SEMICONDUCTOR WAFER CONSTITUTED BY USING THE SAME Jan 29, 2007 Mar 2, 2018 Kyushu Institute of Technology
10 P2015-135706 P6544090 CRYSTALLIZATION METHOD, PATTERNING METHOD, AND THIN FILM TRANSISTOR MANUFACTURING METHOD meetings Feb 7, 2017 Aug 22, 2019 Shimane University
11 P2006-254013 P4852755 METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR ELEMENT Aug 18, 2011 Feb 22, 2018 TOHOKU UNIVERSITY
12 P2009-101931 P5327676 METHOD OF MANUFACTURING POROUS SILICON Aug 18, 2011 Jan 22, 2018 Tokyo Metropolitan University

(1/1 page)

  • 1

PAGE TOP