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* Published Japanese patents only


Hits 49 results

No. Application number
Gazette No
Title
Release Date
Update Date
Information Provider
1 P2005-364018 P4876242 CRYSTAL GROWTH METHOD AND CRYSTAL GROWTH EQUIPMENT meetings Jun 13, 2008 Feb 27, 2018 Shizuoka University
2 P2012-158240 P5645887 DEVICE STRUCTURE HAVING SEMIPOLAR NITRIDE, AND CHARACTERIZED IN NITRIDE NUCLEATION LAYER OR BUFFER LAYER achieved Nov 28, 2012 Dec 21, 2017 Japan Science and Technology Agency
3 P2011-159584 P5887742 DIAMOND SUBSTRATE Sep 1, 2015 Jan 12, 2018 Kanazawa UniversityTLO(KUTLO)
4 P2001-105872 P3507889 FILMING METHOD FOR AMORPHOUS SILICON MEMBRANE Aug 28, 2003 Mar 20, 2018 Kyushu University
5 P2002-198875 P3605643 GROWING METHOD OF ZINC-OXIDE-BASED THIN FILM Aug 8, 2007 Mar 19, 2018 Shimane University
6 P2009-298645 P4852140 HIGH-FREQUENCY POWER SUPPLY DEVICE AND PLASMA GENERATOR achieved Jul 13, 2011 Jan 25, 2018 Japan Science and Technology Agency
7 P2017-115734 P2017-195396A LIGHT-EMITTING DEVICE AND FABRICATION METHOD OF THE SAME Jan 24, 2019 Jan 21, 2020 Japan Science and Technology Agency
8 P2013-138894 P6232611 LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME Mar 5, 2015 Dec 20, 2017 Hokkaido University
9 P2018-154236 P2020-001997A MANUFACTURING METHOD OF CRYSTAL FILM UPDATE_EN foreign May 11, 2020 Jun 17, 2020 Kyoto University
10 P2002-156564 P3951171 MATERIAL FOR FORMING ELECTRON TRANSFERABLE BODY, METHOD FOR FORMING ELECTRON TRANSFERABLE BODY AND ELECTRON TRANSFERABLE BODY achieved Jun 10, 2011 Mar 19, 2018 Japan Science and Technology Agency
11 P2001-046866 P3820443 METHOD AND SYSTEM FOR DEPOSITING SiO2 FILM USING LASER ABLATION Jan 25, 2008 Mar 20, 2018 Japan Defense Agency
12 P2006-128789 P5122082 METHOD FOR FORMING ELECTRON TRANSFERABLE BODY AND MATERIAL FOR FORMING ELECTRON TRANSFERABLE BODY achieved Jun 28, 2011 Feb 23, 2018 Japan Science and Technology Agency
13 P2009-117791 P5557180 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT achieved Sep 8, 2016 Jan 23, 2018 Yamaguchi TLO
14 P2005-072030 P4710002 METHOD FOR MANUFACTURING FILM Aug 31, 2007 Feb 27, 2018 Tokyo University of Agriculture and Technology
15 P2008-223713 P5655228 METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURE Mar 31, 2011 Jan 28, 2020 Hokkaido University
16 P2007-298752 P5394632 METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE SAME Mar 14, 2011 May 27, 2020 Osaka Prefecture University
17 P2004-146779 P4411433 METHOD FOR PRODUCING SILICON CARBIDE, SILICON CARBIDE, AND APPARATUS FOR PRODUCING SILICON CARBIDE Dec 28, 2007 Mar 7, 2018 Saitama University
18 P2006-254013 P4852755 METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR ELEMENT Aug 18, 2011 Feb 22, 2018 TOHOKU UNIVERSITY
19 P2018-154238 P2019-163200A METHOD OF MANUFACTURING CRYSTAL FILM foreign May 11, 2020 May 11, 2020 Kyoto University
20 P2018-154237 P2019-034883A METHOD OF MANUFACTURING CRYSTAL FILM foreign May 12, 2020 May 12, 2020 Kyoto University
21 P2013-125018 P6057292 METHOD OF MANUFACTURING SIC SEMICONDUCTOR ELEMENT foreign Apr 2, 2015 Dec 18, 2017 Kwansei Gakuin University
22 P2005-162166 P5224256 METHOD OF PROCESSING SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT achieved Jul 19, 2007 Feb 26, 2018 Kwansei Gakuin University
23 P2000-297832 P3521223 METHOD TO CONTROL STRUCTURE OF OXIDE FILM AND APPARATUS USED FOR THE METHOD meetings Aug 28, 2003 Apr 6, 2012 Nagaoka University of Technology
24 P2007-219890 P4538476 OPTICAL SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF achieved Mar 13, 2009 Feb 7, 2018 Saitama University
25 P2013-033503 P6137668 PROCESS OF MANUFACTURING ZINC OXIDE CRYSTAL LAYER, ZINC OXIDE CRYSTAL LAYER, AND MIST CHEMICAL VAPOR DEPOSITION DEVICE meetings Apr 1, 2013 Dec 20, 2017 Kumamoto University
26 P2015-149146 P6694210 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE UPDATE_EN Jul 19, 2017 Jun 9, 2020 Yamaguchi TLO
27 P2016-213949 P2018-070422A PRODUCTION METHOD OF GALLIUM OXIDE, AND CRYSTAL GROWTH APPARATUS meetings May 12, 2017 Dec 23, 2019 Wakayama University
28 P2010-221791 P5594773 SELECTIVE FILM FORMATION METHOD, FILM FORMATION APPARATUS AND STRUCTURE Apr 23, 2012 Jan 17, 2018 Kyushu University
29 P2007-078580 P5205613 SELECTIVE GROWTH METHOD OF GaN LAYER achieved Jul 8, 2016 Feb 9, 2018 Yamaguchi TLO
30 P2000-181229 P3430206 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD Feb 24, 2004 Apr 6, 2012 Japan Science and Technology Agency
31 P2017-039028 P2018-147946A SEMICONDUCTOR FILM FORMING METHOD meetings Oct 21, 2019 Jan 9, 2020 Kyushu Institute of Technology
32 P2013-156638 P6265328 SEMICONDUCTOR LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT USING THE SAME Aug 13, 2013 Jan 31, 2018 Nagoya Institute of Technology
33 P2005-247902 P5034035 SEMICONDUCTOR LIGHT EMITTING ELEMENT, PACKAGE THEREOF, AND MANUFACTURING METHOD THEREOF meetings Apr 2, 2007 Feb 27, 2018 Shizuoka University
34 P2006-002972 P4915009 SEMICONDUCTOR MEMBER, AND METHOD OF MANUFACTURING SAME achieved Jun 29, 2016 Feb 22, 2018 Yamaguchi TLO
35 P2014-097751 P6253150 SEMICONDUCTOR SUBSTRATE, EPITAXIAL WAFER AND METHOD FOR MANUFACTURING EPITAXIAL WAFER Jun 14, 2017 Jan 22, 2018 Tokyo University of Agriculture and Technology
36 P2015-026211 P6399600 SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND VAPOR PHASE GROWTH APPARATUS USED THEREFOR Dec 28, 2016 Oct 31, 2018 Yamaguchi TLO
37 P2009-115912 P5464544 SINGLE CRYSTAL SiC SUBSTRATE, SINGLE CRYSTAL SiC SUBSTRATE WITH EPITAXIAL GROWTH LAYER, SiC SUBSTRATE, CARBON SUPPLY FEED SUBSTRATE, AND SiC SUBSTRATE WITH CARBON NANOMATERIAL Aug 5, 2013 Jan 22, 2018 Kwansei Gakuin University
38 P2010-138027 P5545567 SUBSTRATE FOR GROWING SINGLE CRYSTAL DIAMOND, AND METHOD FOR PRODUCING THE SINGLE CRYSTAL DIAMOND Apr 12, 2011 Jan 16, 2018 Kanazawa UniversityTLO(KUTLO)
39 P2013-176635 P6181474 SUBSTRATE FOR GROWING NITRIDE SEMICONDUCTOR Mar 24, 2015 Dec 15, 2017 University of Shiga Prefecture
40 P2008-082208 P4993211 VACUUM CONVEYANCE MECHANISM AND MULTI-CHAMBER SYSTEM INCLUDING THE SAME Oct 23, 2009 Feb 6, 2018 Japan Science and Technology Agency
41 P2004-564676 P4486506 (In Japanese) ハイドライド気相成長方法による転位密度の低い無極性窒化ガリウムの成長 achieved Jun 21, 2011 Mar 9, 2018 Japan Science and Technology Agency
42 P2010-526523 P5392855 (In Japanese) 半導体基板及びその製造方法 achieved foreign Sep 8, 2016 Jan 17, 2018 Yamaguchi TLO
43 P2019-157855 P2020-038968A (In Japanese) 半導体積層構造体の製造方法及び半導体積層構造体 Jun 3, 2020 Jun 3, 2020 University of Fukui
44 P2008-514810 P5743127 (In Japanese) 半極性(Ga,Al,In,B)N薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
45 P2008-500965 P5706601 (In Japanese) 平坦な半極性窒化ガリウムの成長技術 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
46 P2008-530223 P5270348 (In Japanese) 有機金属化学気相成長法による半極性(Al,In,Ga,B)Nの成長促進法 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
47 P2007-513224 P5379973 (In Japanese) 有機金属気相成長法による非極性窒化インジウムガリウム薄膜、ヘテロ構造物およびデバイスの製作 Jul 6, 2011 Feb 9, 2018 Japan Science and Technology Agency
48 P2013-541636 P6083676 (In Japanese) 窒素がドープされたアモルファスシリコンカーバイドよりなるn型半導体及びn型半導体素子の製造方法 meetings Jun 17, 2015 Dec 20, 2017 Yamaguchi TLO
49 P2010-521665 P5168605 (In Japanese) pチャネル薄膜トランジスタとその製造方法 Jan 10, 2012 Jan 15, 2018 Japan Science and Technology Agency

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