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* Published Japanese patents only

Hits 24 results

No. Application number
▲▼		 Gazette No
▲▼		 Title
▲▼		 Release Date
▲▼		 Update Date
▲▼		 Information Provider
▲▼
1 P2001-086119 P3584284 METHOD OF GROWING CALCIUM-SILICIDE THIN FILM Jan 18, 2005 Mar 20, 2018 Shizuoka University
2 P2002-266012 P4164562 TRANSPARENT THIN FILM FIELD EFFECT TYPE TRANSISTOR USING HOMOLOGOUS THIN FILM AS ACTIVE LAYER achieved Jun 4, 2004 Jan 27, 2021 Japan Science and Technology Agency
3 P2001-340066 P4298194 NATURAL SUPERLATTICE HOMOLOGOUS SINGLE CRYSTAL THIN FILM AND METHOD OF MANUFACTURING THE SAME meetings achieved Oct 1, 2003 Mar 16, 2018 Japan Science and Technology Agency
4 P2005-094203 P4441689 MANUFACTURING METHOD OF FINE PARTICLE DIFFUSED INSULATING FILM, MEMORY ELEMENT USING THE SAME, MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT, MEMORY ELEMENT, AND LIGHT EMITTING ELEMENT USING THE SAME FILM Dec 1, 2006 Feb 26, 2018 HIROSHIMA UNIVERSITY
5 P2004-242351 P4701376 THIN FILM CRYSTALLIZATION METHOD AND APPARATUS Dec 28, 2007 Mar 7, 2018 Saitama University
6 P2006-238022 P5119434 MAGNETIC SEMICONDUCTOR THIN FILM AND MANUFACTURING METHOD THEREOF meetings Mar 28, 2008 Feb 22, 2018 Nagaoka University of Technology
7 P2008-025483 P5360639 METHOD OF MANUFACTURING SURFACE-MODIFIED SINGLE CRYSTAL SiC SUBSTRATE, SINGLE CRYSTAL SiC SUBSTRATE WITH EPITAXIAL GROWTH LAYER, SEMICONDUCTOR CHIP, SEED SUBSTRATE FOR SINGLE CRYSTAL SiC GROWTH, AND POLYCRYSTAL SiC SUBSTRATE WITH SINGLE CRYSTAL GROWTH LAYER Aug 5, 2013 Jan 30, 2018 Kwansei Gakuin University
8 P2007-298752 P5394632 METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE SAME Mar 14, 2011 May 27, 2020 Osaka Prefecture University
9 P2009-274910 P5540349 METHOD OF MANUFACTURING SEMICONDUCTOR WAFER Aug 5, 2013 Jan 22, 2018 Kwansei Gakuin University
10 P2010-164010 P5561676 HEAT TREATMENT APPARATUS FOR SiC SEMICONDUCTOR WAFER achieved Aug 5, 2013 Jan 12, 2018 Kwansei Gakuin University
11 P2015-531725 P5999611 (In Japanese) トンネル電界効果トランジスタ、その製造方法およびスイッチ素子 Mar 15, 2017 Dec 18, 2017 Japan Science and Technology Agency
12 P2011-141111 P6010809 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE meetings Apr 10, 2013 Jan 9, 2018 University of the Ryukyus
13 P2013-125018 P6057292 METHOD OF MANUFACTURING SIC SEMICONDUCTOR ELEMENT foreign Apr 2, 2015 Dec 18, 2017 Kwansei Gakuin University
14 P2013-176635 P6181474 SUBSTRATE FOR GROWING NITRIDE SEMICONDUCTOR Mar 24, 2015 Dec 15, 2017 University of Shiga Prefecture
15 P2013-156638 P6265328 SEMICONDUCTOR LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT USING THE SAME Aug 13, 2013 Jan 31, 2018 Nagoya Institute of Technology
16 P2018-530815 P6432004 (In Japanese) 窒化物半導体及びその製造方法 meetings Jan 29, 2021 Jan 29, 2021 Japan Science and Technology Agency
17 P2015-135706 P6544090 CRYSTALLIZATION METHOD, PATTERNING METHOD, AND THIN FILM TRANSISTOR MANUFACTURING METHOD meetings Feb 7, 2017 Aug 22, 2019 Shimane University
18 P2017-543415 P6600918 (In Japanese) トンネル電界効果トランジスタ Sep 21, 2018 Nov 21, 2019 Japan Science and Technology Agency
19 P2015-209337 P6614651 MANUFACTURING METHOD AND APPARATUS FOR SILICON NANOPARTICLES meetings Jun 24, 2020 Jul 20, 2020 Keio University
20 P2016-025819 P6712735 POWER ELEMENT Nov 10, 2016 Jul 21, 2020 Waseda University
21 P2019-521337 P6788302 (In Japanese) 化合物半導体、コンタクト構造、半導体素子、透明電極、化合物半導体の製造方法及びスパッタガン meetings Sep 30, 2020 Dec 22, 2020 Japan Science and Technology Agency
22 P2015-168227 P2017-045897A DIAMOND FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR Mar 29, 2017 Jan 17, 2020 Waseda University
23 P2018-196890 P2019-062204A LED ELEMENT AND METHOD OF MANUFACTURING THE SAME Sep 30, 2020 Sep 30, 2020 Japan Science and Technology Agency
24 P2019-157855 P2020-038968A METHOD FOR MANUFACTURING SEMICONDUCTOR STACKED STRUCTURE AND SEMICONDUCTOR STACKED STRUCTURE Jun 3, 2020 Jul 17, 2020 University of Fukui

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