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* Published Japanese patents only


Hits 55 results

No. Application number
Gazette No
Title
Release Date
Update Date
Information Provider
1 P2004-167883 P4500961 THIN FILM FORMING METHOD achieved Feb 16, 2006 Mar 13, 2018 Kyushu Institute of Technology
2 P2015-221683 P2017-088454A SUBSTRATE, LUMINOUS ELEMENT, AND METHOD OF PRODUCING SUBSTRATE meetings Jun 23, 2017 Jan 8, 2020 Kyoto Institute of Technology
3 P2010-138027 P5545567 SUBSTRATE FOR GROWING SINGLE CRYSTAL DIAMOND, AND METHOD FOR PRODUCING THE SINGLE CRYSTAL DIAMOND Apr 12, 2011 Jan 16, 2018 Kanazawa UniversityTLO(KUTLO)
4 P2011-068129 P5892358 STATIONARY PLASMA GENERATION DEVICE Apr 18, 2013 Jan 11, 2018 Nihon University
5 P2015-026211 P6399600 SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND VAPOR PHASE GROWTH APPARATUS USED THEREFOR Dec 28, 2016 Oct 31, 2018 Yamaguchi TLO
6 P2014-097751 P6253150 SEMICONDUCTOR SUBSTRATE, EPITAXIAL WAFER AND METHOD FOR MANUFACTURING EPITAXIAL WAFER Jun 14, 2017 Jan 22, 2018 Tokyo University of Agriculture and Technology
7 P2006-002972 P4915009 SEMICONDUCTOR MEMBER, AND METHOD OF MANUFACTURING SAME achieved Jun 29, 2016 Feb 22, 2018 Yamaguchi TLO
8 P2013-156638 P6265328 SEMICONDUCTOR LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT USING THE SAME Aug 13, 2013 Jan 31, 2018 Nagoya Institute of Technology
9 P2017-039028 P2018-147946A SEMICONDUCTOR FILM FORMING METHOD meetings Oct 21, 2019 Jan 9, 2020 Kyushu Institute of Technology
10 P2007-078580 P5205613 SELECTIVE GROWTH METHOD OF GaN LAYER achieved Jul 8, 2016 Feb 9, 2018 Yamaguchi TLO
11 P2010-221791 P5594773 SELECTIVE FILM FORMATION METHOD, FILM FORMATION APPARATUS AND STRUCTURE Apr 23, 2012 Jan 17, 2018 Kyushu University
12 P2006-083679 P4940425 RAW MATERIAL GAS JETTING NOZZLE, AND CHEMICAL VAPOR DEPOSITION APPARATUS May 8, 2009 Feb 20, 2018 Kyoto University
13 P2016-213949 P2018-070422A PRODUCTION METHOD OF GALLIUM OXIDE, AND CRYSTAL GROWTH APPARATUS meetings May 12, 2017 Dec 23, 2019 Wakayama University
14 P2005-036870 P5002803 PRODUCTION METHOD OF DIAMOND-LIKE CARBON FILM meetings Feb 16, 2007 Mar 5, 2018 The University of Electro-Communications
15 P2015-102143 P6561402 PRODUCTION METHOD OF DIAMOND Aug 20, 2015 Sep 30, 2019 Kanazawa UniversityTLO(KUTLO)
16 P2016-183910 P2018-048368A PRODUCTION METHOD OF AMORPHOUS CARBON, AND AMORPHOUS CARBON Oct 30, 2017 Jan 8, 2020 Yamaguchi TLO
17 P2015-149146 P6694210 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE UPDATE_EN Jul 19, 2017 Jun 9, 2020 Yamaguchi TLO
18 P2013-033503 P6137668 PROCESS OF MANUFACTURING ZINC OXIDE CRYSTAL LAYER, ZINC OXIDE CRYSTAL LAYER, AND MIST CHEMICAL VAPOR DEPOSITION DEVICE meetings Apr 1, 2013 Dec 20, 2017 Kumamoto University
19 P2014-233732 P6411869 PLASMA REACTION DEVICE meetings Jan 27, 2015 Nov 20, 2018 Tokyo Denki University
20 P2011-174128 P5895395 PARTICLE ALIGNING DEVICE USING PLASMA AND PARTICLE ALIGNING METHOD meetings Nov 15, 2012 Jan 11, 2018 Kyoto Institute of Technology
21 P2001-058917 P5002864 OXIDE PHOTOCATALYTIC MATERIAL USING ORGANOMETALLIC COMPOUND AND ITS APPLICATION ARTICLE achieved Apr 8, 2013 Feb 21, 2018 Hachinohe National College of Technology
22 P2000-297832 P3521223 METHOD TO CONTROL STRUCTURE OF OXIDE FILM AND APPARATUS USED FOR THE METHOD meetings Aug 28, 2003 Apr 6, 2012 Nagaoka University of Technology
23 P2018-154238 P2019-163200A METHOD OF MANUFACTURING CRYSTAL FILM foreign May 11, 2020 May 11, 2020 Kyoto University
24 P2018-154237 P2019-034883A METHOD OF MANUFACTURING CRYSTAL FILM foreign May 12, 2020 May 12, 2020 Kyoto University
25 P2011-141111 P6010809 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE meetings Apr 10, 2013 Jan 9, 2018 University of the Ryukyus
26 P2005-069186 P4182224 METHOD OF FORMING HARD CARBON NITRIDE FILM Sep 29, 2006 Feb 28, 2018 Nagaoka University of Technology
27 P2004-014439 P3947791 METHOD OF FORMING FLUORINE-ADDED SILICON OXIDE FILM BY LIGHT IRRADIATION Dec 19, 2008 Mar 7, 2018 Japan Defense Agency
28 P2002-061361 P3837496 METHOD OF ACCELERATING REACTION FOR FORMING COATING FILM ON SURFACE OF SUBSTRATE, AND APPARATUS USED IN THE SAME Dec 22, 2003 Mar 20, 2018 Nagaoka University of Technology
29 P2006-133269 P4843768 METHOD FOR PRODUCING THIN FILM meetings Dec 28, 2007 Feb 20, 2018 University of Miyazaki
30 P2004-146779 P4411433 METHOD FOR PRODUCING SILICON CARBIDE, SILICON CARBIDE, AND APPARATUS FOR PRODUCING SILICON CARBIDE Dec 28, 2007 Mar 7, 2018 Saitama University
31 P2005-072030 P4710002 METHOD FOR MANUFACTURING FILM Aug 31, 2007 Feb 27, 2018 Tokyo University of Agriculture and Technology
32 P2007-062629 P4827061 METHOD FOR MANUFACTURING CUBIC BORON NITRIDE Nov 28, 2011 Feb 8, 2018 Kyushu University
33 P2009-070630 P5196403 METHOD FOR MANUFACTURING SAPPHIRE SUBSTRATE, AND SEMICONDUCTOR DEVICE achieved Sep 8, 2016 Jan 23, 2018 Yamaguchi TLO
34 P2003-064586 P3950967 METHOD FOR FORMING SOLID COMPOUND FILM CONTAINING Si-O-Si BOND, MODIFICATION METHOD OF SOLID COMPOUND FILM INTO SILICON OXIDE, METHOD FOR FORMING PATTERN, AND LITHOGRAPHIC RESIST Dec 19, 2008 Mar 14, 2018 Japan Defense Agency
35 P2006-128789 P5122082 METHOD FOR FORMING ELECTRON TRANSFERABLE BODY AND MATERIAL FOR FORMING ELECTRON TRANSFERABLE BODY achieved Jun 28, 2011 Feb 23, 2018 Japan Science and Technology Agency
36 P2002-156564 P3951171 MATERIAL FOR FORMING ELECTRON TRANSFERABLE BODY, METHOD FOR FORMING ELECTRON TRANSFERABLE BODY AND ELECTRON TRANSFERABLE BODY achieved Jun 10, 2011 Mar 19, 2018 Japan Science and Technology Agency
37 P2018-154236 P2020-001997A MANUFACTURING METHOD OF CRYSTAL FILM UPDATE_EN foreign May 11, 2020 Jun 17, 2020 Kyoto University
38 P2015-197158 P6661189 MANUFACTURING METHOD OF GRAPHENE FILM meetings Sep 18, 2018 Mar 18, 2020 Advanced Industrial Science and Technology
39 P2009-298645 P4852140 HIGH-FREQUENCY POWER SUPPLY DEVICE AND PLASMA GENERATOR achieved Jul 13, 2011 Jan 25, 2018 Japan Science and Technology Agency
40 P2010-164010 P5561676 HEAT TREATMENT APPARATUS FOR SiC SEMICONDUCTOR WAFER achieved Aug 5, 2013 Jan 12, 2018 Kwansei Gakuin University
41 P2001-105872 P3507889 FILMING METHOD FOR AMORPHOUS SILICON MEMBRANE Aug 28, 2003 Mar 20, 2018 Kyushu University
42 P2001-080050 P3607947 ELECTRON RELEASING MATERIAL meetings Apr 8, 2005 Mar 20, 2018 Nagaoka University of Technology
43 P2011-159584 P5887742 DIAMOND SUBSTRATE Sep 1, 2015 Jan 12, 2018 Kanazawa UniversityTLO(KUTLO)
44 P2012-158240 P5645887 DEVICE STRUCTURE HAVING SEMIPOLAR NITRIDE, AND CHARACTERIZED IN NITRIDE NUCLEATION LAYER OR BUFFER LAYER achieved Nov 28, 2012 Dec 21, 2017 Japan Science and Technology Agency
45 P2012-195690 P6031725 APPARATUS FOR FORMING ALLOY THIN FILM meetings Apr 11, 2014 Feb 22, 2019 Nihon University
46 P2013-033096 P6099260 TRANSPARENT CONDUCTIVE BODY AND PRODUCTION METHOD OF TRANSPARENT CONDUCTIVE BODY Feb 19, 2015 Dec 18, 2017 Waseda University
47 P2014-553237 P6371223 (In Japanese) g-C3N4フィルムの製造方法およびその利用 foreign Aug 21, 2019 Oct 2, 2019 RIKEN
48 P2005-503668 P4214279 (In Japanese) 4元組成比傾斜膜の作成方法及び2元組成比・膜厚傾斜膜の作成方法 Jun 23, 2011 Feb 26, 2018 Japan Science and Technology Agency
49 P2006-514112 P4815603 (In Japanese) 超臨界流体又は亜臨界流体を用いた酸化物薄膜、又は金属積層薄膜の成膜方法、及び成膜装置 meetings foreign Dec 25, 2009 Feb 21, 2018 University of Yamanashi
50 P2017-548816 P6590420 (In Japanese) 窒素化合物の製造方法及び製造装置 foreign Sep 18, 2018 Nov 20, 2019 Advanced Industrial Science and Technology
51 P2013-541636 P6083676 (In Japanese) 窒素がドープされたアモルファスシリコンカーバイドよりなるn型半導体及びn型半導体素子の製造方法 meetings Jun 17, 2015 Dec 20, 2017 Yamaguchi TLO
52 P2008-530223 P5270348 (In Japanese) 有機金属化学気相成長法による半極性(Al,In,Ga,B)Nの成長促進法 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
53 P2017-565507 WO2017135136 (In Japanese) 支持体上に単原子が分散した構造体、支持体上に単原子が分散した構造体を製造する方法およびスパッタ装置 Jan 24, 2019 Jan 15, 2020 Hokkaido University
54 P2019-157855 P2020-038968A (In Japanese) 半導体積層構造体の製造方法及び半導体積層構造体 NEW_EN Jun 3, 2020 Jun 3, 2020 University of Fukui
55 P2018-560410 WO2018128193 (In Japanese) 六方晶窒化ホウ素薄膜とその製造方法 Nov 26, 2019 Jan 21, 2020 Japan Science and Technology Agency

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