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* Published Japanese patents only


Hits 36 results

No. Application number
Gazette No
Title
Release Date
Update Date
Information Provider
1 P2007-298752 P5394632 METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE SAME Mar 14, 2011 May 27, 2020 Osaka Prefecture University
2 P2011-268141 P6450061 RED LIGHT-EMITTING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Jun 27, 2013 Jan 18, 2019 Osaka University
3 P2002-198875 P3605643 GROWING METHOD OF ZINC-OXIDE-BASED THIN FILM Aug 8, 2007 Mar 19, 2018 Shimane University
4 P2002-156564 P3951171 MATERIAL FOR FORMING ELECTRON TRANSFERABLE BODY, METHOD FOR FORMING ELECTRON TRANSFERABLE BODY AND ELECTRON TRANSFERABLE BODY achieved Jun 10, 2011 Mar 19, 2018 Japan Science and Technology Agency
5 P2001-054382 P3969959 TRANSPARENT OXIDE P-N JUNCTION DIODE Oct 1, 2003 Mar 16, 2018 Japan Science and Technology Agency
6 P2004-331166 P4257431 METHOD OF FORMING POROUS SEMICONDUCTOR FILM, LIGHT EMITTING DEVICE, AND OPTICAL SENSOR meetings Nov 2, 2006 Mar 13, 2018 Gunma University
7 P2004-244210 P4500963 QUANTUM SEMICONDUCTOR DEVICE AND ITS FABRICATION PROCESS Feb 16, 2007 Mar 13, 2018 The University of Electro-Communications
8 P2004-207620 P4517144 MOS FIELD EFFECT TRANSISTOR TYPE QUANTUM DOT LIGHT-EMITTING ELEMENT AND LIGHT-RECEIVING ELEMENT, PHOTOELECTRON INTEGRATED CHIP USING THE SAME, AND DATA PROCESSOR Mar 3, 2006 Mar 7, 2018 HIROSHIMA UNIVERSITY
9 P2004-309992 P4631047 STRUCTURE PROVIDED WITH ANODICALLY OXIDIZED ALUMINA FILM, ITS PRODUCTION METHOD AND ITS UTILIZATION May 12, 2006 Mar 7, 2018 HIROSHIMA UNIVERSITY
10 P2005-247902 P5034035 SEMICONDUCTOR LIGHT EMITTING ELEMENT, PACKAGE THEREOF, AND MANUFACTURING METHOD THEREOF meetings Apr 2, 2007 Feb 27, 2018 Shizuoka University
11 P2005-178650 P4491610 SEMICONDUCTOR FUNCTION ELEMENT Oct 31, 2008 Feb 27, 2018 Chiba University
12 P2005-094203 P4441689 MANUFACTURING METHOD OF FINE PARTICLE DIFFUSED INSULATING FILM, MEMORY ELEMENT USING THE SAME, MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT, MEMORY ELEMENT, AND LIGHT EMITTING ELEMENT USING THE SAME FILM Dec 1, 2006 Feb 26, 2018 HIROSHIMA UNIVERSITY
13 P2005-512858 P5719493 (In Japanese) 表面粗化による高効率の(B,Al,Ga,In)Nベースの発光ダイオード achieved Jun 23, 2011 Feb 26, 2018 Japan Science and Technology Agency
14 P2006-254012 P4997502 METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT Aug 18, 2011 Feb 22, 2018 TOHOKU UNIVERSITY
15 P2006-254013 P4852755 METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR ELEMENT Aug 18, 2011 Feb 22, 2018 TOHOKU UNIVERSITY
16 P2006-002972 P4915009 SEMICONDUCTOR MEMBER, AND METHOD OF MANUFACTURING SAME achieved Jun 29, 2016 Feb 22, 2018 Yamaguchi TLO
17 P2006-131763 P4392505 POROUS SILICON FILM, ITS MANUFACTURING METHOD AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT meetings Dec 28, 2007 Feb 21, 2018 Gunma University
18 P2007-513224 P5379973 (In Japanese) 有機金属気相成長法による非極性窒化インジウムガリウム薄膜、ヘテロ構造物およびデバイスの製作 Jul 6, 2011 Feb 9, 2018 Japan Science and Technology Agency
19 P2007-219890 P4538476 OPTICAL SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF achieved Mar 13, 2009 Feb 7, 2018 Saitama University
20 P2008-500965 P5706601 (In Japanese) 平坦な半極性窒化ガリウムの成長技術 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
21 P2008-514810 P5743127 (In Japanese) 半極性(Ga,Al,In,B)N薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
22 P2008-520225 P5010597 (In Japanese) 耐圧釜を用いた超臨界アンモニア中でのIII族窒化物結晶の成長方法 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
23 P2008-222095 P5344676 SUBSTRATE FOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT May 21, 2010 Jan 30, 2018 Kanazawa Institute of Technology
24 P2008-298420 P5540292 ILLUMINATION DEVICE meetings Apr 4, 2011 Jan 30, 2018 Techno Network Shikoku co.,ltd.
25 P2009-070630 P5196403 METHOD FOR MANUFACTURING SAPPHIRE SUBSTRATE, AND SEMICONDUCTOR DEVICE achieved Sep 8, 2016 Jan 23, 2018 Yamaguchi TLO
26 P2009-117791 P5557180 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT achieved Sep 8, 2016 Jan 23, 2018 Yamaguchi TLO
27 P2009-201593 P5409210 SEMICONDUCTOR LIGHT EMITTING ELEMENT May 23, 2011 Jan 22, 2018 Kanazawa Institute of Technology
28 P2010-526523 P5392855 (In Japanese) 半導体基板及びその製造方法 achieved foreign Sep 8, 2016 Jan 17, 2018 Yamaguchi TLO
29 P2010-540380 P5464446 (In Japanese) 半導体発光素子及びその製造方法 achieved foreign Sep 8, 2016 Jan 17, 2018 Yamaguchi TLO
30 P2010-037025 P5435646 SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME achieved Sep 8, 2016 Jan 17, 2018 Yamaguchi TLO
31 P2010-080473 P5376462 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME achieved Sep 8, 2016 Jan 17, 2018 Yamaguchi TLO
32 P2011-013852 P5702165 HIGH-EFFICIENCY GALLIUM NITRIDE BASED LIGHT-EMITTING DIODE PROVIDED BY SURFACE ROUGHENING achieved Jul 14, 2011 Jan 12, 2018 Japan Science and Technology Agency
33 P2011-053393 P5822190 MULTI-WAVELENGTH LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD FOR THE SAME achieved foreign Nov 4, 2011 Jan 4, 2018 Yamaguchi TLO
34 P2011-060133 P5854419 MULTIPLE-WAVELENGTH LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME achieved foreign Nov 4, 2011 Jan 4, 2018 Yamaguchi TLO
35 P2000-131570 P3451314 METHOD OF GROWING HIGH QUALITY CRYSTAL Jan 18, 2005 Nov 7, 2017 Shizuoka University
36 P2000-225122 P3538634 SUBSTRATE FOR SEMICONDUCTOR ELEMENT AND METHOD OF PRODUCING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT Jan 18, 2005 Nov 7, 2017 Shizuoka University

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