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* Published Japanese patents only


Hits 20 results

No. Application number
Gazette No
Title
Release Date
Update Date
Information Provider
1 P2016-025819 P2016-157932A POWER ELEMENT Nov 10, 2016 Jan 17, 2020 Waseda University
2 P2015-168227 P2017-045897A DIAMOND FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR Mar 29, 2017 Jan 17, 2020 Waseda University
3 P2011-141111 P6010809 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE meetings Apr 10, 2013 Jan 9, 2018 University of the Ryukyus
4 P2013-176635 P6181474 SUBSTRATE FOR GROWING NITRIDE SEMICONDUCTOR Mar 24, 2015 Dec 15, 2017 University of Shiga Prefecture
5 P2001-086119 P3584284 METHOD OF GROWING CALCIUM-SILICIDE THIN FILM Jan 18, 2005 Mar 20, 2018 Shizuoka University
6 P2015-135706 P6544090 CRYSTALLIZATION METHOD, PATTERNING METHOD, AND THIN FILM TRANSISTOR MANUFACTURING METHOD meetings Feb 7, 2017 Aug 22, 2019 Shimane University
7 P2004-242351 P4701376 THIN FILM CRYSTALLIZATION METHOD AND APPARATUS Dec 28, 2007 Mar 7, 2018 Saitama University
8 P2007-298752 P5394632 METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE SAME Mar 14, 2011 Feb 8, 2018 Osaka Prefecture University
9 P2013-156638 P6265328 SEMICONDUCTOR LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT USING THE SAME Aug 13, 2013 Jan 31, 2018 Nagoya Institute of Technology
10 P2006-238022 P5119434 MAGNETIC SEMICONDUCTOR THIN FILM AND MANUFACTURING METHOD THEREOF meetings Mar 28, 2008 Feb 22, 2018 Nagaoka University of Technology
11 P2008-025483 P5360639 METHOD OF MANUFACTURING SURFACE-MODIFIED SINGLE CRYSTAL SiC SUBSTRATE, SINGLE CRYSTAL SiC SUBSTRATE WITH EPITAXIAL GROWTH LAYER, SEMICONDUCTOR CHIP, SEED SUBSTRATE FOR SINGLE CRYSTAL SiC GROWTH, AND POLYCRYSTAL SiC SUBSTRATE WITH SINGLE CRYSTAL GROWTH LAYER Aug 5, 2013 Jan 30, 2018 Kwansei Gakuin University
12 P2009-274910 P5540349 METHOD OF MANUFACTURING SEMICONDUCTOR WAFER Aug 5, 2013 Jan 22, 2018 Kwansei Gakuin University
13 P2010-164010 P5561676 HEAT TREATMENT APPARATUS FOR SiC SEMICONDUCTOR WAFER achieved Aug 5, 2013 Jan 12, 2018 Kwansei Gakuin University
14 P2013-125018 P6057292 METHOD OF MANUFACTURING SIC SEMICONDUCTOR ELEMENT foreign Apr 2, 2015 Dec 18, 2017 Kwansei Gakuin University
15 P2001-340066 P4298194 NATURAL SUPERLATTICE HOMOLOGOUS SINGLE CRYSTAL THIN FILM AND METHOD OF MANUFACTURING THE SAME meetings achieved Oct 1, 2003 Mar 16, 2018 Japan Science and Technology Agency
16 P2000-181229 P3430206 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD Feb 24, 2004 Apr 6, 2012 Japan Science and Technology Agency
17 P2002-266012 P4164562 TRANSPARENT THIN FILM FIELD EFFECT TYPE TRANSISTOR USING HOMOLOGOUS THIN FILM AS ACTIVE LAYER achieved Jun 4, 2004 Mar 16, 2018 Japan Science and Technology Agency
18 P2015-531725 P5999611 (In Japanese) トンネル電界効果トランジスタ、その製造方法およびスイッチ素子 Mar 15, 2017 Dec 18, 2017 Japan Science and Technology Agency
19 P2017-543415 P6600918 (In Japanese) トンネル電界効果トランジスタ Sep 21, 2018 Nov 21, 2019 Japan Science and Technology Agency
20 P2005-094203 P4441689 MANUFACTURING METHOD OF FINE PARTICLE DIFFUSED INSULATING FILM, MEMORY ELEMENT USING THE SAME, MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT, MEMORY ELEMENT, AND LIGHT EMITTING ELEMENT USING THE SAME FILM Dec 1, 2006 Feb 26, 2018 HIROSHIMA UNIVERSITY

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