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* Published Japanese patents only


Hits 13 results

No. Application number
Gazette No
Title
Release Date
Update Date
Information Provider
1 P2014-544591 P6222665 (In Japanese) 線維化非ヒト動物及びその用途 achieved foreign Apr 6, 2020 May 20, 2020 Kyoto University
2 P2017-115734 P2017-195396A LIGHT-EMITTING DEVICE AND FABRICATION METHOD OF THE SAME Jan 24, 2019 Jan 21, 2020 Japan Science and Technology Agency
3 P2012-158240 P5645887 DEVICE STRUCTURE HAVING SEMIPOLAR NITRIDE, AND CHARACTERIZED IN NITRIDE NUCLEATION LAYER OR BUFFER LAYER achieved Nov 28, 2012 Dec 21, 2017 Japan Science and Technology Agency
4 P2010-526004 P5751513 (In Japanese) 窒化ガリウムのバルク結晶とその成長方法 achieved Jul 14, 2011 Jan 15, 2018 Japan Science and Technology Agency
5 P2011-013852 P5702165 HIGH-EFFICIENCY GALLIUM NITRIDE BASED LIGHT-EMITTING DIODE PROVIDED BY SURFACE ROUGHENING achieved Jul 14, 2011 Jan 12, 2018 Japan Science and Technology Agency
6 P2009-534647 P5883552 (In Japanese) III族窒化物結晶を安熱法成長させる方法 achieved Jul 13, 2011 Jan 25, 2018 Japan Science and Technology Agency
7 P2008-500965 P5706601 (In Japanese) 平坦な半極性窒化ガリウムの成長技術 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
8 P2008-514810 P5743127 (In Japanese) 半極性(Ga,Al,In,B)N薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
9 P2008-520225 P5010597 (In Japanese) 耐圧釜を用いた超臨界アンモニア中でのIII族窒化物結晶の成長方法 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
10 P2008-530223 P5270348 (In Japanese) 有機金属化学気相成長法による半極性(Al,In,Ga,B)Nの成長促進法 achieved Jul 11, 2011 Feb 6, 2018 Japan Science and Technology Agency
11 P2007-513224 P5379973 (In Japanese) 有機金属気相成長法による非極性窒化インジウムガリウム薄膜、ヘテロ構造物およびデバイスの製作 Jul 6, 2011 Feb 9, 2018 Japan Science and Technology Agency
12 P2005-512858 P5719493 (In Japanese) 表面粗化による高効率の(B,Al,Ga,In)Nベースの発光ダイオード achieved Jun 23, 2011 Feb 26, 2018 Japan Science and Technology Agency
13 P2004-564676 P4486506 (In Japanese) ハイドライド気相成長方法による転位密度の低い無極性窒化ガリウムの成長 achieved Jun 21, 2011 Mar 9, 2018 Japan Science and Technology Agency

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