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No. Application number
Gazette No
Title
Release Date
Update Date
Information Provider
1 P2016-134310 P2018-006646A SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Nov 22, 2018 Nov 22, 2018 Kyoto University
2 P2016-011679 P2017-135159A THERMOELECTRIC ELEMENT COMPRISING BORON CARBIDE CERAMIC AND METHOD OF MANUFACTURING THE SAME commons Oct 24, 2017 Nov 21, 2017 Doshisha University
3 P2017-067147 P2018-168020A PRODUCTION METHOD OF SiC SINGLE CRYSTAL UPDATE_EN commons Jul 13, 2017 Feb 22, 2019 Shinshu University
4 P2014-028174 P6344844 BORON CARBIDE/TITANIUM BORIDE COMPOSITE CERAMIC AND METHOD FOR PRODUCING THE SAME commons Jun 9, 2016 Jul 19, 2018 Doshisha University
5 P2016-076389 P2017-186961A METHOD AND SYSTEM FOR PREVENTING GENERATION OF SOOT DEPOSIT commons May 11, 2016 Jan 24, 2018 Shinshu University
6 P2016-033015 P2017-150031A SiC PHOTOELECTRODE WITH HIGH CONVERSION EFFICIENCY, AND HYDROGEN PRODUCTION DEVICE PREPARED THEREWITH commons meetings Apr 19, 2016 Nov 21, 2017 Nagoya Institute of Technology
7 P2015-099467 P2016-219467A PTC THERMISTOR MEMBER AND PTC THERMISTOR ELEMENT commons Sep 1, 2015 Mar 28, 2017 Nagoya University
8 P2006-048461 P4496333 THERMOELECTRIC MATERIAL Aug 8, 2014 Aug 6, 2015 Kyoto University
9 P2012-530519 P5761533 (In Japanese) SiC半導体素子 Nov 26, 2013 Sep 9, 2015 Nara Institute Science and Technology
10 P2011-111721 P5545268 SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE Aug 5, 2013 Jan 5, 2018 Kwansei Gakuin University
11 P2012-185253 P5376477 SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE Aug 5, 2013 Dec 25, 2017 Kwansei Gakuin University
12 P2011-545956 P5610492 (In Japanese) SiC半導体素子およびその作製方法 meetings Jul 12, 2013 Jan 11, 2018 Nara Institute Science and Technology
13 P2012-225346 P5836911 MANUFACTURING METHOD OF STAINLESS STEEL Mar 11, 2013 Jan 7, 2016 Tokyo Gakugei University
14 P2012-282645 P2014-125374A PRODUCTION METHOD OF METAL CARBIDE commons Jan 25, 2013 Aug 17, 2015 Gifu University
15 P2011-070711 P5693323 METHOD FOR PRODUCING ELECTRODE CATALYST FOR FUEL CELL Nov 1, 2012 Jan 17, 2018 Kyoto University
16 P2004-165935 P4636816 CEMENTED CARBIDE AND METHOD OF MANUFACTURING THE SAME achieved Oct 21, 2011 Mar 13, 2018 NAGANO PREFECTURE GENERAL INDUSTRIAL TECHNOLOGY CENTER
17 P2005-259797 P5148820 TITANIUM ALLOY COMPOSITE MATERIAL AND ITS MANUFACTURING METHOD achieved foreign Oct 21, 2011 Feb 26, 2018 NAGANO PREFECTURE GENERAL INDUSTRIAL TECHNOLOGY CENTER
18 P1999-110363 P3141109 MAGNETIC RECORDING MEDIUM AND ITS MANUFACTURE commons Aug 18, 2011 Mar 22, 2018 TOHOKU UNIVERSITY
19 P2004-053655 P4500994 CUTTING TOOL AND CUTTING DEVICE commons meetings Aug 18, 2011 Mar 13, 2018 Tokyo University of Agriculture and Technology
20 P2001-164996 P3971903 METHOD OF MANUFACTURING SiC COMPOSITE MATERIAL OF SiC REINFORCED TYPE achieved Jun 8, 2011 Mar 19, 2018 Japan Science and Technology Agency
21 P2010-235290 P5252595 METHOD FOR PRODUCING TITANIUM SILICON CARBIDE Apr 18, 2011 Jan 17, 2018 Shinshu University
22 P2006-282341 P5145551 CARBIDE-OCCLUDING CARBON NANOCAPSULE AND ITS PRODUCING METHOD commons Mar 18, 2011 Feb 20, 2018 Nagoya Institute of Technology
23 P2004-172850 P4625944 MAGNESIUM MATERIAL HAVING EXCELLENT CORROSION RESISTANCE Mar 7, 2011 Mar 13, 2018 Kyushu Institute of Technology
24 P2006-163856 P5167479 GRAPHENE INTERGRATED CIRCUIT Feb 19, 2010 Feb 22, 2018 Hokkaido University
25 P2007-278811 P5322044 SEMICONDUCTOR SILICON CARBIDE SUBSTRATE WITH EMBEDDED INSULATING LAYER, AND MANUFACTURING METHOD THEREOF meetings Dec 4, 2009 Feb 19, 2018 Kyushu Institute of Technology
26 P2007-239028 P5057327 BORON CARBIDE CERAMIC AND ITS PRODUCTION METHOD foreign May 29, 2009 Feb 9, 2018 Doshisha University
27 P2007-070865 P5007134 COMPONENT POLISHING METHOD, COMPONENTS, AND PLASTIC FOR POLISHING Dec 5, 2008 Feb 7, 2018 Kanazawa Institute of Technology
28 P2007-077256 P5213095 METHOD FOR FLATTENING SURFACE OF SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE, AND SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE achieved Nov 21, 2008 Feb 8, 2018 Kwansei Gakuin University
29 P2007-077439 P5213096 LIQUID PHASE EPITAXIAL GROWTH METHOD OF SINGLE CRYSTAL SILICON CARBIDE, METHOD FOR PRODUCING SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE, AND SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE achieved Nov 21, 2008 Feb 8, 2018 Kwansei Gakuin University
30 P2005-337667 P5110496 METHOD OF PRODUCING NaCl TYPE SILICON CARBIDE Oct 7, 2008 Feb 27, 2018 National Institute for Materials Science
31 P2006-047781 P5170609 MANUFACTURING METHOD OF SILICON CARBIDE NANOWIRE Oct 7, 2008 Feb 15, 2018 National Institute for Materials Science
32 P2005-247774 P5019305 DIAMOND ULTRAVIOLET SENSOR Sep 26, 2008 Feb 27, 2018 National Institute for Materials Science
33 P2006-187415 P5152887 METHOD OF REFORMING SURFACE OF SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE, METHOD OF FORMING SINGLE CRYSTAL SILICON CARBIDE THIN FILM, ION IMPLANTATION AND ANNEALING METHOD, AND SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND SINGLE CRYSTAL SILICON CARBIDE SEMICONDUCTOR SUBSTRATE achieved Mar 28, 2008 Feb 15, 2018 Kwansei Gakuin University
34 P2006-212627 P5207427 LIQUID PHASE GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL, SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL, LIQUID PHASE EPITAXIAL GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL PLATE, SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL PLATE, GENERATION METHOD OF SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL SUBSTRATE AND SINGLE CRYSTAL SILICON CARBIDE SEED CRYSTAL SUBSTRATE achieved Mar 28, 2008 Feb 15, 2018 Kwansei Gakuin University
35 P2004-146779 P4411433 METHOD FOR PRODUCING SILICON CARBIDE, SILICON CARBIDE, AND APPARATUS FOR PRODUCING SILICON CARBIDE commons Dec 28, 2007 Mar 7, 2018 Saitama University
36 P2005-134309 P4660759 BONDING STRUCTURE OF CARBON UTILIZATION ELECTRON EMISSION MATERIAL TO BASE PLATE AND ITS BONDING METHOD Nov 30, 2007 Mar 5, 2018 High Energy Accelerator Research Organization
37 P2005-072074 P4714860 METHOD FOR PRODUCING PLANT GROWING CARBIDE BOARD achieved Oct 4, 2007 Mar 5, 2018 Kagoshima TLO
38 P2005-337810 P4538635 CATALYST FOR REMOVING ENVIRONMENTALLY BURDENSOME SUBSTANCE, AND METHOD OF PREPARING THE SAME commons Aug 16, 2007 Mar 5, 2018 Kyoto University
39 P2001-235246 P3619872 MANUFACTURING APPARATUS FOR THERMOELECTRIC CONVERSION MATERIAL Aug 8, 2007 Mar 19, 2018 Shimane University
40 P2005-125865 P4840841 METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE achieved Jul 19, 2007 Feb 26, 2018 Kwansei Gakuin University
41 P2005-162166 P5224256 METHOD OF PROCESSING SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT achieved Jul 19, 2007 Feb 26, 2018 Kwansei Gakuin University
42 P2005-152009 P4478797 SILICON CARBIDE-BASED POROUS BODY AND ITS MANUFACTURING METHOD Dec 13, 2006 Feb 27, 2018 Gunma University
43 P2005-093279 P4567503 METHOD OF FORMING OXIDE FILM, SEMICONDUCTOR DEVICE, METHOD AND APPARATUS FOR MANUFACTURING THE SEMICONDUCTOR DEVICE, METHOD OF OXIDIZING SILICON CARBIDE SUBSTRATE, AND SILICON CARBIDE MOS SEMICONDUCTOR DEVICE AND SILICON CARBIDE MOS INTEGRATED CIRCUIT USING THE METHOD, AND APPARATUS FOR MANUFACTURING THE SILICON CARBIDE MOS SEMICONDUCTOR DEVICE AND SILICON CARBIDE MOS INTEGRATED CIRCUIT commons meetings Jul 13, 2006 Feb 26, 2018 Japan Science and Technology Agency
44 P2004-261784 P4423420 PRODUCTION METHOD FOR NOBLE METAL BASED CATALYST CARRYING CARBIDE AND NOBLE METAL BASED CATALYST CARRYING CARBIDE commons Apr 21, 2006 Mar 13, 2018 Kobe University
45 P2001-105971 P3482468 STRESS MEASUREMENT SENSOR Mar 18, 2005 Mar 20, 2018 Japan Aerospace Exploration Agency
46 P2003-097408 P4463490 CARBIDE ELECTRODE CATALYST commons meetings Dec 7, 2004 Mar 15, 2018 Japan Science and Technology Agency

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