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人工光学物性に基づく新しい光子制御デバイス - デジタルフォトニクスを目指して

研究報告コード R000000562
掲載日 2002年9月30日
  • 中野 義昭
  • 東京大学大学院工学系研究科
  • 東京大学大学院工学系研究科
報告名称 人工光学物性に基づく新しい光子制御デバイス - デジタルフォトニクスを目指して
報告概要 半導体材料の光物性を一原子層単位で設計・制御された人工結晶構造により変革し,電気光学効果,相互位相変調,四光波混合,磁気光学効果など,広義の光非線型性を飛躍的に高めること,ならびに,これら半導体人口光物性と半導体分布ブラッグ反射器やファイバブラッグ格子鏡で構成される高度な光共振器/干渉計構造に基づいて,ダイナミック光メモリ,光ロジック,デジタル波長変換器,光 3R 中継器などの全光子制御デジタルデバイス/回路を実現し,デジタルフォトニクスの基礎を築くことによって光情報通信技術の発展に資することを目指している。なお,この研究は5チームで実施中であり,図1にタスク分担とスケジュールを示す。

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  • 光学情報処理
  • 非線形光学
  • 光デバイス一般
  • 光変調器
  • 光伝送素子
  • 計算機
関連発表論文 (1)Pubulications
1) Drew N. Maywar, Govind P. Agrawal, and Yoshiaki Nakano, "Robust optical control of an optical-amplifier-based flip-flop", OSA Optics Express, vol.6, no.3, pp.75-80, January 31, 2000.
2)Byongjin Ma, Masumi Saitoh, and Yoshiaki Nakano, "Analysis and fabrication of an all-optical wavelength converter based on directionally-coupled semiconductor optical amplifiers", IEICE Transactions on Electronics, vol. E83-C, no.2, pp.248254, February 2000.
3)Olivier Feron, Masakazu Sugiyama, Weerachai Asawamethapant, Naoki Futakuchi, Y. Feurprier, Yoshiaki Nakano, and Yukihiro Shimogaki, "MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor", Applied Surface Science, voL 159-160, Issue 1-4, pp. 318-327, June 2000.
4)Ahsan M. Nazmul, Hiroinasa Shimizu and Masaaki Tanaka, "Magneto-optical spectra of epitaxial ferromagnetic MnAs films grown on Si and GaAs substrates", Journal of Applied Physics 87, pp.
5)Masaki Kato and Yoshiaki Nakano, "60nm wavelength range polarization-insensitive 1.55μm electroabsorption modulator using tensile-strained pre-biased multiple quantum well", IEICE Transactions on Electronics, vol. E83-C, no.6, pp 927-936, June 2000.
6)Drew N. Maywar, Yoshiaki Nakano, and Govind P. Agrawal, "1.31-to-1.55μm wavelength conversion by optically pumping a distributed feedback amplifier", IEEE Photonics Technology Letters, vol. 12, no. 7, pp. 858-860, July 2000.
7)Masaaki Tanaka (Invited paper), "Ferromagnetic semiconductor heterostructures based on (GaMn)As", Journal of Vacuum Science and Technology A18, pp.1247-1253 (2000).
8)H. Shimizu, M. Miyainura, and M. Tanaka, "Enhanced Magneto-Optical Effect in a GaAs:MnAs Nanoacale Hybrid Structure Combined with GaAs/AlAs Distributed Bragg Reflectors", J. Vac. Sci. & Technol. B18, pp.2063-2065 (2000).
9)S. Yamashita and D. Mataumoto, "Waveform reshaping based on injection locking of a distributed-feedback semiconductor laser," to be published in IEEE Photonics Technology Letters, Oct. 2000.
10) B. Grandidier, J.P Nys, C. Delerue, D. Stievenard, Y. Higo, and M. Tanaka "Atomic-Scale Study of GaMnAs/GaAs Layers" Appl Phys. Lett., October 30,2000, in press.
11) Olivier Feron, Yoshiaki Nakano, and Yukihiro Shimogaki, "Kinetic study of P and As desorption from binary and ternary III/V semiconductor surface by in-situ ellipsometry", submitted to Journal of Crystal Growth.
12) Takayuki Nakano, Yoshiaki Nakano, and Yukihiro Shimogaki, "Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE", submitted to Journal of Crystal Growth.
13) Peter P. Vasil'ev, Masahiro Tsuchiya,, "Femtosecond optical pulse generation by a monolithic mode locked semiconductor laser with a nonlinear mirror", submitted to Applied Physics Letters.
14) Koji Igarashi, "Soliton Pulse Compression from 5 pate 20 fs by a 15.1m-long Step-like Despersion Profirled Fiber with Dispersion-Flattened Fibers Employed", submitted to Photonics Technology Letters.
15) Masahiro Tsuchiya, "Experimental Investigation on Carrier Dynamics in SCH-MQW Waveguide Saturable Absorber of Passively Mode-locked Monolithic Laser Diode", submitted to Optical and Quantum Electronics.
16) Masahiro Tsuchiya, "Sub-100 fs SDPF option compressor for diode laser pulses", submitted to Optical and Quantum Electronics.
17) M. Tanaka, M. Miyamura, and H. Shimizu (Invited paper), "Enhancement of magneto-optical effect in a GaAs:MnAs hybrid structure sandwiched by GaAs/AlAs distributed Bragg reflectors", to be published in J. Crystal Growth.
18) M. Tanaka and Y. Mishima, "Low Temperature Molecular Beam Epitaxy Growth and Properties of (Ga,Er)As", to be published in J. Crystal Growth.
19) A. M. Nazmul, A. G. Banshchikov, H. Shimizu, and M. Tanaka, "MBE growth process of ferromagnetic MnAs on Si(III) substrates", to be published in J. Crystal Growth.
20) H. Shinaizu, M. Miyamura, and M. Tanaka "Magneto-optical Properties of a GaAs:MnAs Hybrid Structure Sandwiched by GaAs/AlAs Distributed Bragg Reflectors: Enhanced Magneto-optical Effect and Theoretical Analysis for Optical Isolator Application" submitted to Appl Phys. Lett.
1)Drew N. Maywar, Govind P. Agrawal, and Yoshiaki Nakano, "Semiconductor optical memory based on DFB Amplifier (DFB SOA に基づく半導体光メモリ)”,電子情報通信学会技術研究報告(フォトニックネットワークをベースとする次世代インターネット研究会),PNI99-19,pp.83-87,1999年11月25日.
2)馬炳眞,斎藤真澄,中野義昭,"方向性結合半導体光アンプ型長変換器の動特性解析(Analysis of dynamic characteristics of wavelength converter based on directionally coupled semiconductor optical amplifiers)",電子情報通信学会技術研究報告(光エレクトロニクス研究会),OPE99-90,pp.1-6,1999年11月25-26日.
  • 戦略的基礎研究推進事業、研究領域「電子・光子等の機能制御」研究代表者 中野 義昭(東京大学工学系研究科)/科学技術振興事業団
  • 中野 義昭. Innovative Photon-Controlling Devices Based on Artificial Optical Properties of Semiconductors—Exploration towards Digital Photonics—. 戦略的基礎研究推進事業「電子・光子等の機能制御」The First CREST Symposium on ''Function Evolution of Materials and Devices based on Electron/Photon Related Phenomena'',2000. p.107 - 110.