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(In Japanese)III-V族磁性半導体超構造の光有機磁性効果の研究

Research report code R013000011
Posted date Oct 1, 2003
  • (In Japanese)宗片 比呂夫
  • (In Japanese)東京工業大学理工学研究科
Research organization
  • (In Japanese)東京工業大学大学院理工学研究科
Report name (In Japanese)III-V族磁性半導体超構造の光有機磁性効果の研究
Technology summary (In Japanese)半導体と磁性体との融合化により,磁性金属と磁性絶縁体との間に横たわる未踏範囲を切り開き,スピンの絡む新現象や効果を発見・応用することを目的とする。(In,Mn)Asという物質は,InAsというIII-V族化合物半導体に多量のMnが添加された希薄磁性半導体である。この物質を超薄膜GaAs-Feグラニュー構造化して,非磁性のIII-V族化合物半導体GaAs上に積層しヘテロ構造を形成したあとで光照射を行うと,(In,Mn)As層の磁気秩序が常磁性から強磁性へ変化することが明らかとなった。
Research field
  • Magnetooptical and electrooptical, spectra of inorganic molecules
  • Magnetooptical and electrooptical spectra of organic and complex molecules
  • Photoconduction, photoelectromotive force
Published papers related (In Japanese)(1)H. Munekata, T. Abe, S. Koshihara, A. Oiwa, M. Hirasawa, S. Katsumoto, Y. Iye, C. Urano and H. Takagi: “Light-induced ferromagnetism in III-V-based diluted magnetic semiconductor heterostructures”, J. Appl. Phys. 81, 4862-4864 (1997).
(2)S.Koshihara, A. Oiwa, M. Hirasawa, S. Katsumoto, Y. Iye, C. Urano, H. Takagi, and H. Munekata: “Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn) As/GaSb”, Phys. Rev. Lett. 78, 4617-4620 (1997).
(3)宗片比呂夫,“半導体における光誘起強磁性”,オプトロニクス 195,144-148(1998)。
(4)K. Uchida, K. Nishida, M. Kondo, and H. Munekata: “Epitaxial Growth of GaN Layers with Double-Buffer Layers”, J. Cryst. Growth 189/190, 270-274 (1998).
(5)K. Uchida, K. Nishida, M. Kondo, and H. Munekata: “Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN”, Jpn. J. Appl. Phys. 37, 3882-3888 (1998).
(6)H. Munekata, and S. Koshihara; Carrier-induced magnetism: how and what we pursue with III-V-based magnetic semiconductor heterostructures?; Superlattices and Microstructures 25, 251-258 (1999).
(7)A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, H. Ohno and H. Munekata: Magnetic and transport properties of the ferromagnetic heterostructures (In,Mn) As/(Ga,Al) Sb; Phys. Rev. B 59, 5826-5831 (1999).
(8)S. Hirose, A. Yoshida, M. Yamaura, and H. Munekata: Surface smoothing of GaAs microstructure by atomic layer epitaxy; Appl. Phys. Lett. 74, 964-966 (1999).
(9)T. Kondo, A. Ishii, H. Munekata, and K. Takeda: Three-step molecular beam deposition of crystalline polydiacetylene films on semiconductor substrates with large crystal domains; Jpn. J. Appl. Phys. 38 (7A), L764-766 (1999).
(10)S. Haneda, M. Yamaura, Y. Takatani, and H. Munekata: Preparation and characterization of Fe-based III-V diluted magnetic semiconductor (Ga,Fe) As; Jpn. J. Appl. Phys. 39, L9-12, (2000).
(11)Y. Takatani, S. Haneda, M. Yamaura, M. Tachibana and H. Munekata: Preparation of (Ga,Fe) As and its photo-magnetic characteristics; Inst. Phys. Conf. Ser. No. 166, Papers presented at 26th Intern'l Symp. Compound Semiconductor (Berlin, August 23-26, 1999), p. 83 (2000).
(12)S. Haneda, H. Munekata, and Y. Takatani: Fe-based magnetic-semiconductor hybrid structures for photocarrier-induced magnetism; J. Appl. Phys. 87, 6445-6447 (2000).
Research project
  • Precursory Research for Embryonic Science and Technology.;Structure and Transformation
Information research report
  • (In Japanese)宗片 比呂夫. III-V族磁性半導体超構造の光誘起磁性. 「さきがけ研究21」研究報告会「状態と変革」領域 講演要旨集(研究期間1997-2000),2000. p.14 - 15.